Samsung Electronics Co., Ltd.

William Solari

Seung Hyun Kim

Min Ho Kim

Sang Heon Han

Suk Ho Yoon

Dong Yul Lee

Hyun Wook Shim

Heon Ho Lee

Jang Mi Kim

A method of growing a Group-III nitride crystal includes forming a buffer layer on a silicon substrate and growing a Group-III nitride crystal on the buffer layer. The method of growing of a Group-III nitride crystal is executed through metal-organic chemical vapor deposition (MOCVD) during which a Group-III metal source and a nitrogen source gas are provided. The nitrogen source gas includes hydrogen (H) and at least one of ammonia (NH) and nitrogen (N). At least a partial stage of the operation of growing the Group-III nitride crystal can be executed under conditions in which a volume fraction of hydrogen in the nitrogen source gas ranges from 20% to 40% and a temperature of the silicon substrate ranges from 950&#xb0; C. to 1040&#xb0; C.

Method of growing nitride single crystal and method of manufacturing nitride semiconductor device

A method of manufacturing a semiconductor device, includes forming an aluminum compound film on a surface of a process chamber by supplying an aluminum (Al) source to the process chamber, the surface contacting the aluminum source in the process chamber; disposing a wafer on a susceptor provided in the process chamber after forming the aluminum compound film; and forming a thin film for the semiconductor device on the wafer.

Method of manufacturing semiconductor device and method of maintaining deposition apparatus

Growing community of inventors

Hwaseong-si, South Korea

William Solari