Northrop Grumman Systems Corporation

Microsoft Technology Licensing, LLC

Other

William Robert Reohr

Donald Lynn Miller

Brian R Konigsburg

Randall M Burnett

Steven Brian Shauck

Jeremy William Horner

Nathan Trent Josephsen

Randal L Posey

Quentin P Herr

Anna Y Herr

Donald L Miller

Andrew Hostetler Miklich

Robert J Voigt

Benjamin Bogan Reohr

A memory output circuit for selectively propagating proximate memory output data in a memory array of superconducting memory cells includes multiple datum inputs adapted to operably receive corresponding memory state signals from physically adjacent bit lines in the memory array, and at least one logic gate configured to implement logical OR functionality. The logic gate includes multiple inputs, for receiving at least a subset of the datum inputs operatively coupled thereto, and an output for propagating at least one datum output signal. The memory output circuit further includes at least one delay element operatively coupled to a corresponding one of the datum inputs. The delay element is configured to generate an output signal operably connected to a corresponding one of the inputs of the logic gate, the output signal generated by the delay element being a temporal sequence of at least a subset of the memory state signals supplied thereto delayed by a prescribed delay value.

Time-division multiplexing for superconducting memory

A superconducting distributed bidirectional current driver system includes multiple bidirectional current drivers, a bidirectional current load being operatively coupled between two adjacent bidirectional current drivers. Each of the bidirectional current drivers includes first and second superconducting latch circuits. The first superconducting latch circuit in a first one of the bidirectional current drivers and the second superconducting latch circuit in a second one of the bidirectional current drivers coupled to the current load are selectively activated by first and second activation signals, respectively, to establish a first current path through the current load in a first direction. The second superconducting latch circuit in the second one of the bidirectional current drivers and the first superconducting latch circuit in the first one of the bidirectional current drivers are selectively activated to establish a second current path through the current load in a second direction opposite the first direction.

Superconducting distributed bidirectional current driver system

A superconducting memory circuit for applying and propagating superconducting signals through a plurality of superconducting wires in the memory circuit is provided. The memory circuit includes multiple passive cells arranged in a plurality of sets. Each set of passive cells has associated therewith at least one common superconducting wire interconnecting a subset of the passive cells in the set of passive cells. The memory circuit further including at least one power-signal propagation circuit, an input of the power-signal propagation circuit being coupled with a preceding set of passive cells via a first superconducting wire, and an output of the power-signal propagation circuit being coupled with a subsequent set of passive cells via a second superconducting wire. Upon application of a first superconducting signal to the first superconducting wire, the power-signal propagation circuit applies a second superconducting signal to the second superconducting wire.

Read and write enhancements for arrays of superconducting magnetic memory cells

Superconducting logic arrays (SLAs) and field-programmable gate arrays (FPGAs) that are based on Josephson transmission lines (JTLs) accommodate reciprocal quantum logic (RQL) compliant binary input signals and provide RQL-compliant output signals that are evaluations of generalized logic functions. Each JTL-based superconducting FPGA (JTLBSFPGA) incorporates multiple JTL-based SLAs (JTLBSLAs) connected together. Each JTLBSLA includes an array of software-programmable and/or mask-programmed logic cells that output products of inputs and cell states, such that the JTLBSLAs output evaluations of sum-of-products functions. New JTLBSLA logic cells are described, including some that provide programmable cell states via magnetic Josephson junctions (MJJs). JTLBSFPGAs provide area efficiency and clock speed advantages over CMOS FPGAs. Unlike SLAs based on Josephson magnetic random access memory (JMRAM), JTLBSLAs do not require word line drivers, flux pumps, or sense amplifiers. Because JTLBSLAs and JTLBSFPGAs are RQL-compliant, they can also include RQL gates connected within or between them, without signal conversion circuitry.

JTL-based superconducting logic arrays and FPGAS

JTL-based superconducting logic arrays and FPGAs

One embodiment describes a quantum memory system. The system includes an array controller that comprises a plurality of flux pumps configured to provide write currents in a write operation and read currents in a read operation with respect to a plurality of quantum memory cells, the array controller being configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.

Timing control in a quantum memory system

A memory system including a content addressable memory having an array of content addressable memory elements including a plurality of rows of content addressable memory elements and a plurality of columns of content addressable memory elements is provided. Each of the content addressable memory elements further includes a first superconducting quantum interference device (SQUID) and a second superconducting quantum interference device (SQUID), where an input bit to each of the content addressable memory elements is compared with: (1) a first state of the first SQUID and (2) a second state of the second SQUID to generate an output signal. The memory system further includes a Josephson magnetic random access memory (JMRAM), coupled to the content addressable memory.

Memory system with a content addressable superconducting memory

One embodiment describes a superconducting cell array logic circuit system. The system includes a plurality of superconducting cells arranged in an array of at least one row and at least one column. The superconducting cell array logic circuit system can be configured to implement a logic operation on at least one logic input signal received at at least one respective input associated with the respective at least one row to provide at least one logic output signal on at least one respective output associated with the at least one column based on a predetermined selective coupling of the at least one input to the at least one output via the plurality of superconducting cells.

Superconducting cell array logic circuit system

One embodiment describes a JMRAM memory cell system. The system includes a phase hysteretic magnetic Josephson junction (PHMJJ) that stores one of a first binary state and a second binary state in response to a write current provided during a data write operation and to provide a superconducting phase based on the stored digital state. The system also includes a directional write element configured to provide a directional bias current during the data write operation to provide the superconducting phase of the PHMJJ in a predetermined direction corresponding to the first binary state. The system further includes at least one Josephson junction having a critical current that is based on the superconducting phase of the PHMJJ and being configured to provide an output corresponding to the stored digital state in response to a read current that is provided during a read operation.

Superconducting phase-controlled hysteretic magnetic Josephson junction JMRAM memory cell

One embodiment describes a quantum memory system. The system includes a plurality of quantum memory cells arranged in an array of rows and columns. Each of the plurality of quantum memory cells can be configured to store a binary logic state in response to write currents in a write operation and configured to provide an indication of the binary logic state in response to read currents in a read operation. The system also includes an array controller comprising a plurality of flux pumps configured to provide the write currents and the read currents with respect to the rows and columns. The array controller can be configured to control timing associated with the write operation and the read operation in response to memory request signals based on application of the write currents and the read currents and based on recharging flux associated with the plurality of flux pumps.

Growing community of inventors

Severna Park, MD, United States of America

William Robert Reohr