Watkins- Johnson Company

Novalux, Inc.

William Robert Hitchens

Jason Paul Watson

Alan G Lewis

Aram Mooradian

Walter A Strifler

Ronald David Remba

Glen Phillip Carey

Brad Cantos

Carol Yu-Bin Lee

An array of surface emitting laser diodes has a series electrical connection of laser diodes. Junction isolation is used to isolate laser diodes in the array.

Apparatus, system, and method for junction isolation of arrays of surface emitting lasers

Disclosed is a method of fabricating semiconductor devices having sub-micron gate electrodes using angle and direct evaporation techniques. A first and second photoresist layer are formed atop a substrate and the second layer is selectively processed to form an edge with a well controlled profile. A first metal is evaporated at a first angle and the edge of the second photoresist layer shields a portion of the first photoresist layer form metal deposition which defines a patterned opening of desired width. The patterned opening is now etched in a well controlled manner to expose a portion of the active channel region of the device, and a desired height is defined by the distance from the first metal layer to the exposed channel region. A second layer is deposited by evaporation at a second angle thereby forming a plug in the channel region wherein placement of one edge of the plug is determined by the height and the second angle. A gate metal is now directly deposited atop the semiconductor to form a gate electrode in the active channel region, said electrode having a gate length defined by the distance between the edge of the plug and one side of the first metal patterned opening.

Method of fabricating sub-micron gate electrode by angle and direct

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Mountain View, CA, United States of America

William Robert Hitchens