International Business Machines Corporation

Other

Shipley Company, L.l.c. of Marlborough

William R Brunsvold

Ahmad D Katnani

Willard E Conley

Ratnam Sooriyakumaran

George J Hefferon

Wayne Martin Moreau

Mahmoud M Khojasteh

David Earle Seeger

Wu-Song S Huang

Melvin W Montgomery

Robert David Allen

Pushkara Rao Varanasi

Ari Aviram

Nageshwer Rao Bantu

Daniel Bucca

Dominic Changwon Yang

Dale M Crockatt

Qinghuang Lin

Robert Lavin Wood

Phillip Joe Brock

David Robert Medeiros

Ranee W Kwong

Margaret C Lawson

Christopher F Lyons

Douglas Charles LaTulipe

Timothy M Hughes

Nancy E Iwamoto

Ali Afzali-Ardakani

Hiroshi Ito

Gregory Michael Wallraff

Jean M Frechet

Roger F Sinta

Burton Jesse Carpenter

Harbans S Sachdev

Carlton G Willson

Ali Afzali-ardakani

George W Orsula

Ronald Wayne Nunes

William D Hinsberg, Iii

Logan L Simpson

Kevin Michael Welsh

Scott L Jacobs

Christopher John Knors

Joseph LaTorre

Michael G McMaster

Premlatha J Jagannathan

Ming-Fea Chow

Steve S Miura

George L Mack

David Paul Merritt

Uday Kumar

Philip Chiu

Robert J Tweig

Mahmoud M Khofasteh

James I Fahey

Ann M Uptmor

Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.

Underlayer compositions for multilayer lithographic processes

Deactivated aromatic amines are useful to improve shelf life and performance of acid-catalyzed photoresist compositions without adverse interaction with radiation-sensitive acid generator components in said resist. The compositions are especially useful in photolithography processes used in forming integrated circuits and other miniaturized components.

Deactivated aromatic amines as additives in acid-catalyzed resists

A high-performance radiation sensitive silicon-containing negative-tone resist is provided along with a method of using the silicon-containing resist in multilayer, including bilayer, imaging for manufacturing semiconductor devices. The negative-tone silicon-containing resist is based on an acid catalyzed high-contrast crosslinking of aqueous base soluble silicon-containing phenolic polymers through reaction of a carbocation of the crosslinking agent with the hydroxyl site of the phenolic group in the silicon-containing polymers. A chemically amplified silicon-containing negative-tone resist composition comprising said silicon-containing polymer resin; at least one crosslinking agent; one acid generator; and a solvent is provided. The silicon-containing resist composition has high silicon content and provide excellent resolution and a means of patterning high aspect ratio resist patterns. The resist compositions can be used as the top imaging layer in a multilayer, including bilayer, scheme to fabricate semiconductor devices using various irradiation sources, such as mid-ultraviolet (UV), deep-UV, extreme UV, X-ray, e-beam and ion-beam irradiation.

Radiation sensitive silicon-containing resists

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Top antireflective coating film

Methods are provided to prepare photoresists without isolation of various components, i.e. in a 'one-pot' procedure. Preferred one-pot preparation methods of the invention include preparing a photoresist resin binder in a selected photoresist solvent and, without isolation of the resin binder from the solvent, adding a photoactive component and any other desired photoresist materials to the resin binder in solution to thereby provide a liquid photoresist composition in the solvent in which the resin binder was prepared. The invention also provides novel methods for synthesizing resist resin binders, particularly phenolic polymers that contain phenolic OH groups covalently bonded to another moiety such as acid labile groups or inert blocking groups.

Methods for preparing photoresist compositions

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Antireflective coating films

Proton sponge, berberine, and cetyltrimethyl ammonium hydroxide base compounds are used as additives to chemically amplified photoresists based on modified polyhydroxystyrene (PHS). The base additives scavenge free acids from the photoresist in order to preserve the acid labile moieties on the modified PHS polymer. The base additives are well suited to industrial processing conditions, do not react with the photoacid compounds in the photoresist composition to form byproducts which would hinder photoresist performance, and extend the shelf-life of the photoresist composition. In addition, the proton sponge and berberine base additives have a different absorption spectra than the modified PHS polymer, therefore, the quantity of base additive within the photoresist can be easily assayed and controlled.

Acid Scavengers for use in chemically amplified photoresists

Acid scavengers for use in chemically amplified photoresists

Quinone diazo compounds having bonded to the diazo ring or directly bonded to a ring of the compound, certain non-metallic atoms that improve the photosensitivity thereof are provided. These quinone diazo compounds are useful as photoactive compounds in photoresist compositions, and particularly positive photoresist composition employed in x-ray or electron beam radiation. Also provided is a method for preparing compounds of the present invention.

Quinone diazo compound containing non-metallic atom

Process for producing a positive pattern utilizing naphtho quinone

Positive resist composition containing naphthoquinonediazide compound

A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

Silicon containing positive resist for DUV lithography

Growing community of inventors

Poughkeepsie, NY, United States of America

William R Brunsvold