Advanced Technology Materials, Inc.

Other

Entegris, Inc.

Immunetics, Inc.

William R Bowers

Emanuel Israel Cooper

Michael B Korzenski

Kevin Paul Yanders

Eileen Sparks

Mark A Biscotto

Prerna Sonthalia

Nicole E Thomas

Andrew E Levin

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods for the selective removal of silicon nitride

Ammunition cartridge for a firearm

Case for an ammunition cartridge

A case for an ammunition cartridge including a tubular member having a central axis which includes: a head which includes, a head face which is disposed substantially perpendicular to the central axis, and an extraction groove adjacent to the head face, the extraction groove circumscribing the central axis; a body abutting the head which comprises an internal chamber, a bullet receiving end spaced from the body along the central axis, a convex curved segment abutting the body, the convex curved segment being a first circular curve having a first radius of approximately 0.0263 inches, a frusto-conical segment abutting the convex curved segment, and a concave curved segment abutting the frusto-conical segment, the concave curved segment being a second circular curve having a second radius of approximately 0.1049 inches.

Ammunition cartridge and chamber, and tools for making and reloading same

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

The invention includes assay cassettes that can be employed during rapid flow-through binding assays. The assay cassettes can be disposable units suitable for one-time use and readily assembled to include a filter membrane carried between an upper plate and a lower plate. A pattern of channels can extend through the top plate to allow a fluid sample to be applied through the top plate and onto the filter. The bottom plate can include a plurality of channels that are aligned with the channel of the top plate and which will allow a negative pressure to be applied to the underside of the filter membrane to draw the sample through the filter. In one embodiment, the cassette includes a frangible section that allows the cassette to be divided into a first and second component.

Rapid flow-through binding assay apparatus and method therefor

Growing community of inventors

Dallas, GA, United States of America

William R Bowers