Crystallume Corporation

Siros Technologies, Inc.

Xrystallume

William Phillips

John M Pinneo

Lambertus Hesselink

Robert R McLeod

Sergei L Sochava

Digital data bits are stored at storage locations at plural depths within a holographic storage medium as selective, localized alterations in a format hologram. Micro-localized regions of a reflection format hologram extending throughout the medium are deleted by focusing a high-power laser beam at desired storage locations. The deletion regions have a lower reflectivity than the surrounding parts of the format hologram. Tunable-focus storage and retrieval heads, as well as dynamic aberration compensators, are used for multi-depth access. Storage and retrieval may each be achieved with a single head.

Optical data storage by selective localized alteration of a format hologram

An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europium, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

Diamond film with sharp field emission turn-on

An ultrasmooth-diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europeum, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

Ultrasmooth adherent diamond film coated article and method for making

An ultrasmooth diamond film has a thickness greater than about ten microns and an average grain size less than about 0.5 micron. The ultrasmooth diamond film of the present invention is grown using ordinary microwave plasma CVD methods, with a metal vapor source included in the reactor to produce vapor during the growth of the film. The metal vapor source may be chosen from the first row transition elements, chromium, iron, cobalt, and nickel, or from the lanthanides praseodymium, europeum, or erbium. Any metal capable of existing in the vapor phase in the presence of the hydrogen plasma, will cause formation of the ultrasmooth film of the present invention.

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Belmont, CA, United States of America

William Phillips