Asml Netherlands B.v.

William Peter Van Drent

Johannes Henricus Wilhelmus Jacobs

Jan Steven Christiaan Westerlaken

Joost Jeroen Ottens

Engelbertus Antonius Fransiscus Van Der Pasch

Frank Staals

Emiel Jozef Melanie Eussen

Erik Willem Bogaart

Lukasz Jerzy Macht

Igor Vladimirovich Fomenkov

Alexander Igorevich Ershov

Martinus Hendrikus Antonius Leenders

Johannes Hubertus Josephina Moors

Fei Liu

Sander Catharina Reinier Derks

Antonius Theodorus Wilhelmus Kempen

Daniel Jozef Maria Direcks

Andrew David LaForge

Yue Ma

Klaus Martin Hummler

Alexey Sergeevich Kuznetsov

Peter Gerardus Jonkers

Maurice Wilhelmus Leonardus Hendricus Feijts

Hendrikus Alphonsus Ludovicus Van Dijck

Rui Miguel Duarte Rodrigues Nunes

Parham Yaghoobi

Jeroen Hubert Rommers

Hubertus Johannes Van De Wiel

Umesh Prasad Gomes

Elena Nedanovska

Celal Korkmaz

Alexander Downn Kim

Pieter Gerardus Mathijs Hoeijmakers

Katja Cornelia Joanna Clasina Moors

Violeta Navarro Paredes

Qiushi Zhu

Fernando Brizuela

Rob Carlo Wieggers

Arie Jeffrey Den Boef

Patricius Aloysius Jacobus Tinnemans

Sebastianus Adrianus Goorden

Haico Victor Kok

A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W mK.

Contamination trap

Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

Prolonging optical element lifetime in an EUV lithography system

Degradation of the reflectivity of one or more reflective optical elements in a system (SO) for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber () containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.

The invention relates to a sensor comprising: a radiation source to emit radiation having a coherence length towards a sensor target; and a polarizing beam splitter to split radiation diffracted by the sensor target into radiation with a first polarization state and radiation with a second polarization state, wherein the first polarization state is orthogonal to the second polarization state, and wherein the sensor is configured such that after passing the polarizing beam splitter radiation with the first polarization state has an optical path difference relative to radiation with the second polarization state that is larger than the coherence length.

Sensor, lithographic apparatus, and device manufacturing method

A lithographic apparatus including a substrate table position measurement system and a projection system position measurement system to measure a position of the substrate table and the projection system, respectively. The substrate table position measurement system includes a substrate table reference element mounted on the substrate table and a first sensor head. The substrate table reference element extends in a measurement plane substantially parallel to the holding plane of a substrate on substrate table. The holding plane is arranged at one side of the measurement plane and the first sensor head is arranged at an opposite side of the measurement plane. The projection system position measurement system includes one or more projection system reference elements and a sensor assembly. The sensor head and the sensor assembly or the associated projection system measurement elements are mounted on a sensor frame.

Lithographic apparatus

A level sensor configured to measure a height level of a substrate arranged in a measurement position is disclosed. The level sensor comprises a projection unit to project multiple measurement beams on multiple measurement locations on the substrate, a detection unit to receive the measurement beams after reflection on the substrate, and a processing unit to calculate a height level on the basis of the reflected measurement beams received by the detection unit, wherein the projection unit and the detection unit are arranged next to the substrate, when the substrate is arranged in the measurement position.

Lithographic apparatus and device manufacturing method

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William Peter Van Drent