Seagate Technology Incorporated

Micron Technology Incorporated

William Paul Vavra

Sining Mao

William Frank Witcraft

Mark Lynn Jenson

Lonny L Berg

Alan Hurst

Kaizhong Gao

Michael C Kautzky

Xuhui Jin

Patrick Joseph Ryan

Michael Thomas Johnson

Xiaoyue Huang

Eric Shane Linville

Ladislav Rudolf Pust

Richard P Larson

David Chris Seets

James Keith Price

William J O'Kane

Thu-Van Thi Nguyen

Songsheng Xue

Thermal energy is generated within an optical NFT when in operation within a HAMR head. A heat-sink assembly within the HAMR head extracts thermal energy from the optical NFT and transmits the thermal energy via convection to air surrounding the HAMR head, radiation to surfaces adjacent to the HAMR head, and/or conduction to other parts of the HAMR head. The thermal energy generated within the optical NFT is conducted to the heat-sink. An air-bearing surface of the heat-sink convectively transfers at least some of the thermal energy to air passing between the air-bearing surface and a surface of an adjacent magnetic medium. Further, some of the thermal energy may also radiatively transfer from the air-bearing surface to the magnetic medium.

Heat-sinks for optical near-field transducers

A transducing device having a storage interface surface includes a writer having a pole tip region, a coil having a width positioned around the writer, and a heating element. The heating element extends to near the storage interface surface. A portion of the heating element is at least as wide as the coil. The heating element heats the writer in response to current flow through the heating element.

Writer heater for thermal protrusion shape control in a magnetic writer

An MRAM device comprising an array of MRAM elements, with each element having an MRAM bit influenced by a magnetic field from a current flowing through a conductor, also includes a magnetic keeper formed adjacent the conductor to advantageously alter the magnetic field. The magnetic keeper alters the magnetic field by concentrating the field within the keeper thereby reducing the extent in which fringe field exists, thus allowing the MRAM elements to be formed closer to increase the areal density of the MRAM device. Increase in magnetic field flux due to the magnetic keeper allows operation of the MRAM device with lowered power. Soft magnetic materials such as nickel iron, nickel iron cobalt, or cobalt iron may be used to form the magnetic keeper.

Methods for fabricating a magnetic keeper for a memory device

A magnetoresistive (MR) sensor having reduced operating temperature is disclosed. The MR sensor, which includes an MR stack having a magnetoresistive layer, is configured to operate in a current-perpendicular-to-plane (CPP) mode wherein a sense current flows substantially perpendicular to a longitudinal plane of the magnetoresistive layer. The MR sensor further includes a thermal sink layer positioned with respect to the MR stack to reduce an operating temperature of the magnetoresistive sensor. The thermal sink layer is made of a material having high thermal conductivity, and is preferably separated from the MR stack by a metallic cap or seed layer.

Magnetoresistive sensor with reduced operating temperature

Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device

The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments

Growing community of inventors

Maple Plain, MN, United States of America

William Paul Vavra