Gtat Corporation

Passport Systems, Inc.

William Park, Jr

Geoffrey Ryding

Theodore H Smick

Takao Sakase

Joseph Daniel Gillespie

Ronald Horner

Paul Eide

William Bertozzi

Hilton Frank Glavish

Stephen E Korbly

Alexei V Klimenko

Drew Arnold

Michael Donovan

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60&#xb0;. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45&#xb0; to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Ion implant apparatus and a method of implanting ions

An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.

Ion implant apparatus and method of ion implantation

Methods and systems for generating bremsstrahlung with enhanced photon flux in a narrow cone at forward angles utilize a thin target of a high-Z material such as gold as radiator, supported on a tube of a low-Z material such as titanium, which tube contains a circulating fluid such as water which acts as a coolant and also may absorb the incident electron beam.

Thin walled tube radiator for bremsstrahlung at high electron beam intensities

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Somerville, MA, United States of America

William Park, Jr