University of Colorado

Government of the United States of America, as Represented by the Secretary of Commerce

William Old

Brady Worrell

Christopher Bowman

Kristine A Bertness

Tao Gong

Matthew David Brubaker

Michael Stowell

Douglas A Chapnick

Tristan D McClure-Begley

Christopher C Ebmeier

John Mayer

The invention described herein includes a novel platform for the development of novel shapeshifting drug-like compounds that overcome physical mass limitations as they possess the ability to interconvert internally and spontaneously, i.e., shapeshift, between multiple chemical structures with varying pharmacophore properties. In one preferred embodiment, the invention include systems, methods, and compositions for the synthesis of novel bullvalene amino acid (Bvas) compounds that may further be incorporated into Shape Shifting Cyclic Peptides (SSCP) with varying pharmacophore properties and their use as novel therapeutic compounds.

Compositions and methods of synthesizing shape shifting cyclic peptides (Sscp) and their use in the identification of novel therapeutic compounds

Crosslinking compounds for effective and efficient cross-linking and identification of intermolecular and intramolecular interactions of proteins, peptides and nucleic acids.

Linkers for protein interaction profiling and methods of making and using the same

A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table. A process for producing a nanowire article includes nitrogenating a substrate to form a nitrogenated layer on the substrate; contacting the nitrogenated layer with a precursor; and forming a plurality of gallium nitride nanowires from the precursor on the nitrogenated layer to form the nanowire article in an absence of a catalyst, wherein individual gallium nitride nanowires of the plurality of gallium nitride nanowires include a length axis that is substantially perpendicular to the nitrogenated layer.

Nanowire article and processes for making and using same

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Denver, CO, United States of America

William Old