Applied Materials, Inc.

William N Taylor

David Wingto Cheung

Mark A Fodor

Sebastien Raoux

Mandar Mudholkar

Kevin P Fairbairn

Judy H Huang

Richard Raymond Mett

Mark William Curry

David Silvetti

Ben Pang

S&eacute;bastien Raoux

Sébastien Raoux

A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said reaction zone, a plasma power source for forming a plasma from a process gas introduced into the reaction zone of the deposition chamber and an impedance monitor that is electrically coupled to the deposition chamber to measure an impedance level of the plasma. In a preferred embodiment, the substrate holder is a first electrode and the gas inlet manifold is a second electrode and RF power is supplied by the plasma power source to either the first or second electrodes to form the plasma. In another preferred embodiment, the processing system further includes a computer processor that is communicatively coupled to the impedance monitor and to other control systems of the processing system so that the computer processor can adjust the impedance of the deposition chamber during the course of an extended wafer run if the impedance drifts outside of a predetermined tolerance range.

Method and apparatus for monitoring and adjusting chamber impedance

The present invention provides a safety guard for a type-N coaxial connector that prevents casual human contact with a conductive center pin of the coaxial cable. The safety guard is preferably made of a dielectric material and is generally tubular in shape. The safety guard is adapted to be installed on existing connectors in the field, or to be part of a connector assembly that is to be installed on a coaxial cable. Among the advantages of the present invention are substantial reduction in complexity over prior art interlock connector designs. The safety guard of the present invention is provided for a male connector only, thereby alleviating the need for modification of the mating female connector.

Safety guard for an RF connector

A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.

Mixed frequency CVD process

An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Method and apparatus for cleaning a vacuum line in a CVD system

An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second electrodes having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber. The collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A plasma generation system supplies power to the electrodes to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment

An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.

Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions

A variable capacitor that provides a full range of capacitance, while reducing the amount of rotation necessary to effect maximum variation in capacitance, and while eliminating any wear-related deterioration in device performance includes at least two coplanar, electrically isolated sets of parallel electroconductive members so configured as to form a fixed set of capacitor plates, each of which may be separately electrically connected to an electrical circuit. A movable group having at least one member including at least one electroconductive area is positioned parallel to, and spaced from, the fixed set of plates. The movable group is adapted for rotation about an axis perpendicular to a surface plane of the first set of plates to vary an amount by which said movable group overlaps the surface of each of said capacitor plates, and thereby provide variable capacitive coupling between the two isolated electroconductive members that comprise the fixed set of capacitor plates.

Variable capacitor

A substrate processing system that includes a deposition chamber having a reaction zone, a plasma power source for forming a plasma within the reaction zone and an impedance tuner electrically coupled to the deposition chamber. When initially formed, the plasma has a first impedance level that can be adjusted by the impedance tuner to a second impedance level. In a preferred embodiment, the impedance tuner is a variable capacitor.

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Dublin, CA, United States of America

William N Taylor