Hewlett-packard Development Company, L.P.

Kla Tencor Corporation

Other

UChicago Argonne, LLC

William M Tong

Richard Stanley Williams

Zhiyong Li

Philip John Kuekes

Duncan R Stewart

Jianhua Yang

Jun Gao

Carl E Picciotto

Jeffrey W Elam

Wei E Wu

Anil U Mane

Alan D Brodie

Shih-Yuan Wang

David A Fattal

Raymond G Beausoleil

Alexandre M Bratkovski

Marco Fiorentino

Yong Qin Chen

Zhang-Lin Zhou

Manish Sharma

Gary A Gibson

Christopher F Bevis

M Saif Islam

Kevin Francis Peters

Kenneth Ward

Nathaniel Quitoriano

Sean Spillane

Fung Suong Ou

Ellen R Tappon

Jason Blackstock

James E Ellenson

Sean Xiao-An Zhang

Geoffrey Martin Lyon

Duncan J Stewart

Timothy S Hostetler

Joseph Maurino

Phillip J Kuekes

Shinichi Kojima

Sean Xiao-an Zhang

A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.

Digital pattern generator having charge drain coating

A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

Charge drain coating for electron-optical MEMS

In an example of a method for controlling the formation of dopants in an electrically actuated device, a predetermined concentration of a dopant initiator is selected. The predetermined amount of the dopant is localized, via diffusion, at an interface between an electrode and an active region adjacent to the electrode. The dopant initiator reacts with a portion of the active region to form the dopants.

Electrically actuated device and method of controlling the formation of dopants therein

A memristive device includes: a first electrode; a second electrode; a memristive matrix interposed between the first electrode and the second electrode; a porous dopant diffusion element in physical contact with the memristive matrix and in proximity to the first electrode and the second electrode; and a first mobile dopant species which moves through the porous dopant diffusion element in response to a programming electrical field. A method for using a memristive device having a porous dopant diffusion element includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element, thereby changing the distribution of dopants within a memristive matrix to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device to sense the first state.

Memristive device having a porous dopant diffusion element

An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moir&#xe9; pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed.

Apparatus and methods for electron beam detection

A multilayer memristive device includes a first electrode; a second electrode; a first memristive region and a second memristive region which created by directional ion implantation of dopant ions and are interposed between the first electrode and the second electrode; and mobile dopants which move within the first memristive region and the second memristive region in response to an applied electrical field.

Multilayer memristive devices

A decoding structure employs a main terminal (), a first memristive switch () connected between the main terminal () and a first addressable terminal (), and a second memristive switch () connected between the main terminal () and a second addressable terminal (). The second memristive switch () is oriented so that a voltage polarity on the main terminal () that tends to turn the first memristive switch () on tends to turn the second memristive switch () off.

Decoders using memristive switches

An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.

Individually addressable nano-scale mechanical actuators

Packaged NERS-active structures are disclosed that include a NERS substrate having a NERS-active structure thereon, and a packaging substrate over the NERS substrate having an opening therethrough, the opening in alignment with the NERS-active structure. A membrane may cover the opening in the packaging substrate. In order to perform nanoenhanced Raman spectroscopy, the membrane may be removed, and an analyte placed on the NERS substrate adjacent the NERS-active structure. The membrane may be replaced with another membrane after the analyte has been placed on the substrate. The membrane may maintain the pristine state of the substrate before it is deployed, and the replacement membrane may preserve the substrate and analyte for archival purposes. Also disclosed are methods for performing NERS with packaged NERS-active structures.

Nano-enhanced Raman spectroscopy substrate packaging structure

An assembly for monitoring an environment includes a RFID tag and a sensing unit. The sensing unit is configured to be activated by a RF signal received by the RFID tag and to sense information regarding an environment.

Assembly for monitoring an environment

An optical interconnect includes an optical transmitter having a plurality of optical sources; a light sensing array configured to receive optical beams emitted from the optical sources; and a beam tracking module in communication with the light sensing array. The beam tracking module is configured to calculate a displacement of at least one of the optical beams by extrapolating an extremum from cross-correlation data obtained between at least a portion of a sample reading from the light sensing array and at least a portion of a plurality of shifted versions of a reference reading from the light sensing array. A related method includes calculating a displacement of an optical beam by extrapolating an extremum from cross-correlation data obtained between a sample reading of the optical beam and at least a portion of a plurality of shifted versions of a reference reading from the light sensing array.

Method and system of tracking optical beam shift

Determining a dimensional change in a surface of an object is described. At a first time, a first image of the surface is acquired at a first spatial window thereon having a first known position relative to a frame of reference. At a second time, a second image of the surface is acquired at a second spatial window thereon having a second known position relative to the frame of reference. The first image and the second image are processed according to an image displacement sensing algorithm to determine a relative translation of a first point on the surface between the first and second times. The relative translation of the first point, the first known position, and the second known position are used to determine the dimensional change in the surface between the first and second times.

Determining a dimensional change in a surface using images acquired before and after the dimensional change

A sensor array for sensing at least one of chemical moieties and biological moieties is provided. The sensor array comprises a plurality of working electrodes electrically associated with a reference electrode, each working electrode in combination with the reference electrode forming a transducer. Each working electrode is provided with a coating of a sensing element comprised of an ionizable moiety and a functional group sensitive to one of the chemical and/or biological moieties.

E-field induced ion selective molecular deposition onto sensor arrays

A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.

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San Francisco, CA, United States of America

William M Tong