Agere Systems Inc.

William M Moller

Yuanning Chen

Maxwell Walthour Lippitt, Iii

Sailesh Mansinh Merchant

Pradip Kumar Roy

Sudhanshu Misra

A method for forming a metal silicide region in a silicon region of a semiconductor substrate. The method comprises forming a metal layer over the silicon region, then in succession forming a titanium and a titanium nitride layer thereover. As the substrate is heated to form the silicide, the titanium getters silicon dioxide on the surface of the silicon region and the titanium nitride promotes the formation of a smooth surface at the interface between the silicide layer and the underlying silicon region.

Integrated circuit with metal silicide regions

Method for forming metal silicide regions in an integrated circuit

A method of making a semiconductor device includes the steps of forming an oxide layer adjacent a semiconductor substrate, etching trenches within the oxide layer, depositing a copper layer to at least fill the etched trenches, and forming a copper arsenate layer on the deposited copper layer. The copper arsenate layer is then chemically mechanically polished. The copper layer may be deposited by at least one of electrodeposition, electroplating and chemical vapor deposition. The copper arsenate layer on the surface of the deposited copper layer inhibits oxidation and corrosion and stabilizes the microstructure of the deposited copper layer to thereby eliminate a need to subsequently anneal the deposited copper layer.

Method of making a semiconductor with copper passivating film

Growing community of inventors

Austin, TX, United States of America

William M Moller