Rca Inc.

William M Kramer

James L Rhoads

James A Zollman

An imaging device such as a silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included within the input sensing region for controlling blooming. A passivation region is also included within the input sensing region to stabilize the atomic energy level along a first surface of the wafer. An anti-reflection layer of zinc sulfide and an anti-reflection layer of magnesium fluoride or Cryolite are sequentially deposited on the first surface of the wafer. The two anti-reflection layers form an anti-reflection region which enhances the quantum efficiency of the device in the wavelength range of 400 to 500 nanometers. Each of the layers has an optical thickness substantially equal to a quarter of the wavelength of light incident on the device. A method of forming the anti-reflection region is also disclosed.

Imaging device having two anti-reflection layers on a surface of silicon

An intensified charge coupled image sensor comprises an image intensifier tube including an evacuated envelope having therein a photoemissive cathode, a charge coupled device spaced from said cathode, and a frame member for supporting the charge coupled device. The charge coupled device has a first surface and a second surface with a conductive boundary on the first surface. The frame member has a coefficient of expansion closely matching that of the charge coupled device and a first and second surface with a conductive pattern formed on one of the surfaces. The conductive boundary of the CCD and the conductive pattern of the frame member are in register and bonded together by a braze material to form a unitized structure of superior strength. The method of forming the conductive boundary and the conductive pattern is described as is the brazing method.

Intensified charge coupled image sensor having an improved CCD support

Imaging device having enhanced quantum efficiency

An imaging device such as silicon vidicon has a wafer of single crystal semiconductor material having an input sensing region and a charge storage region. A potential barrier is included for controlling the blooming within the sensing region, and a passivation layer is provided for stabilizing the blooming characteristics. A coating, preferably zirconium oxide, is deposited on the passivation layer to combine with the passivation layer to form an anti-reflection region for enhancing the quantum efficiency of the device. The anti-reflection region has an optical thickness substantially equal to an odd multiple of a quarter of a wavelength of light incident on the device.

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Lancaster, PA, United States of America

William M Kramer