Mks Instruments, Inc.

Applied Science & Technology, Inc.

Plasmability, LLC

Varian Semiconductor Equipment Associates, Inc.

Energetiq Technology, Inc.

William M Holber

Xing Chen

Donald K Smith

Eric J Georgelis

John A Smith

Matthew Mark Besen

Ali Shajii

Andrew Cowe

Mark Attwood

Robert J Basnett

Jonathan Henry Palk

Timothy Roger Robinson

Mark Philip Longson

William Davis Lee

Peter F Kurunczi

Alexandre Likhanskii

Jay Thomas Scheuer

Susan C Trulli

Kevin R Anglin

Daniel Goodman

Stephen F Horne

Ronald W Collins, Jr

Ryan Downey

Andrzej Bortkiewicz

Siddharth P Nagarkatti

Shouqian Shao

Michael Kishinevsky

Timothy E Kalvaitis

Ilya M Bystyak

William S McKinney, Jr

Matthew P Fitzner

Ilya Bystryak

Gary D Alley

Paul A Blackborow

Jeffrey Allen Casey

Lawrence P Bourget

Richard S Post

Shouquian Shao

Amanda Charris-Hernandez

Andrew Francis Basnett

Travis Charles Wade

Adam James Brown

Andrew B Cowe

Jr Ronald W Collins

Eric Georgeus

A method of growing single crystal diamond assisted by polycrystalline diamond growth to enhance dimensions and quality of the single crystal diamond includes thermally mating a diamond seed on a top surface of a substrate holder providing a growth surface for a combination of single crystal diamond and polycrystalline diamond. A predetermined temperature difference between the diamond seed and the substrate holder during processing along with the plasma process conditions causes a single crystal diamond growth rate to be different from a polycrystalline growth rate by a predetermined amount. Process gasses are introduced, and a plasma is formed to grow both single crystal diamond and polycrystalline diamond on the growth surface so that the polycrystalline diamond grown adjacent to the single crystal diamond shields side surfaces of the growing single crystal diamond, thereby improving growth quality across the growing single crystal diamond.

Method of growing single crystal diamond assisted by polycrystalline diamond growth

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

In-situ plasma cleaning of process chamber components

A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.

Toroidal plasma processing apparatus with a shaped workpiece holder

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.

A method of CVD plasma processing for depositing at least one of diamond, diamond-like-carbon, or graphene includes forming a vacuum chamber comprising a conduit and a process chamber. A gas is introduced into the vacuum chamber. An RF electromagnetic field is applied to a magnetic core to form a toroidal plasma loop discharge in the vacuum chamber. A workpiece is positioned in the process chamber for plasma processing at a distance from a hot plasma core to a surface of the workpiece that is in a range from 0.1 cm to 5 cm. A gas comprising hydrogen is introduced to the workpiece so that the toroidal plasma loop discharge generates atomic hydrogen.

Method of CVD plasma processing with a toroidal plasma processing apparatus

A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Method and apparatus for processing metal bearing gases

A system and methods are described for generating reagent ions and product ions for use in a mass spectrometry system. Applications for the system and method are also disclosed for detecting volatile organic compounds in trace concentrations. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass and peak intensity values for ion species during spectrometry and faults within the system.

Chemical ionization reaction or proton transfer reaction mass spectrometry

A system and method are provided for delivering power to a dynamic load. The system includes a power supply providing DC power having a substantially constant power open loop response, a power amplifier for converting the DC power to RF power, a sensor for measuring voltage, current and phase angle between voltage and current vectors associated with the RF power, an electrically controllable impedance matching system to modify the impedance of the power amplifier to at least a substantially matched impedance of a dynamic load, and a controller for controlling the electrically controllable impedance matching system. The system further includes a sensor calibration measuring module for determining power delivered by the power amplifier, an electronic matching system calibration module for determining power delivered to a dynamic load, and a power dissipation module for calculating power dissipated in the electrically controllable impedance matching system.

Radio frequency power delivery system

An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.

Laser-driven light source

Described are infrared light sources and methods for generating infrared radiation. The infrared light source includes a source of laser radiation, a target and an enclosure. The target is positioned in a path of an output region of the source of laser radiation. The target includes an absorbing material that absorbs radiation at a wavelength within the lasing spectrum of the source of laser radiation and converts the absorbed radiation into thermal energy. The enclosure defines a cavity that includes the target. The enclosure includes an infrared reflecting film on a side that defines the cavity.

Laser-heated infrared source

A system and methods are described for generating reagent ions and product ions for use in a quadruple mass spectrometry system. A microwave or high-frequency RF energy source ionizes particles of a reagent vapor to form reagent ions. The reagent ions enter a chamber, such as a drift chamber, to interact with a fluid sample. An electric field directs the reagent ions and facilitates an interaction with the fluid sample to form product ions. The reagent ions and product ions then exit the chamber under the influence of an electric field for detection by a quadruple mass spectrometer module. The system includes various control modules for setting values of system parameters and analysis modules for detection of mass values for ion species during spectrometry and faults within the system.

Chemical ionization reaction or proton transfer reaction mass spectrometry with a quadrupole mass spectrometer

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Cambridge, MA, United States of America

William M Holber