Lsi Corporation

Lsi Logic Corporation

Other

Avago Technologies General IP (Singapore) Pte. Ltd.

William Loh

Choshu Ito

Erik Vaclav Chmelar

Jau-Wen Chen

Kenneth J Doniger

Payman Zarkesh-Ha

Rajagopalan Parthasarathy

Li Lynn Ooi

Tze Wee Chen

Sergey Vladimirovich Gribok

Venkata N S N Rao

Peter J Wright

Benjamin Mbouombouo

Prasad Chalasani

Minxuan Liu

Ken Doniger

Paymen Zarkesh-Ha

A digital voltmeter, where a number of clock pulses for a first ramp voltage to reach an input voltage is determined. Next, a number of clock pulses for a second ramp voltage to reach the input voltage is determined. One of the first and the second ramp voltages having a least number of clock pulses to reach the input voltage is determined. A determination is made for a number of clock pulses for the determined one of the first and the second ramp voltages to reach a reference voltage. A digital code is generated for the input voltage based on the determined number of clock pulses for reaching the reference voltage and the determined least number of clock pulses for reaching the input voltage.

Digital voltmeter

A system and method of designing the physical layout of an SoC incorporating row-based placement of analog standard cells whose heights are constrained to a predetermined row height or integer multiple thereof. A library of analog standard cells may be utilized by an ECAD tool to map, place, and route analog and mixed signal circuits in a manner similar to how such ECAD tool may utilize a library of digital standard cells to map, place, and route digital circuits. Mapping, placing, and routing of digital, analog, and mixed signal circuits may proceed within a unified ECAD SoC physical design flow. Finally, a general type analog standard cell is taught to further increase the speed and efficiency of analog and mixed-signal SoC layout.

Row based analog standard cell layout design and methodology

A design methodology which prevents functional failure caused by CDM ESD events. A transistor model is used to model the final states of cells, and a simulator is then used to identify invulnerable cells. Cells that are potential failure sites are then identified. The cells which have been identified as being potential victims are replaced by the previously-identified invulnerable cells that have the identical logic function. On the other hand, if a cell with identical function cannot be found, an invulnerable buffer cell (that will not effect logic function) can be inserted in front of the potential victim transistor as protection. By replacing all the potential victim cells with cells which have been determined to be invulnerable, the resulting design will be guaranteed to be CDM ESD tolerant.

Methodology for preventing functional failure caused by CDM ESD

A time division multiplexing intra-chip communication system comprising at least one communication link. Such communication link comprises serialization and transmission circuitry, reception and deserialization circuitry, and at least one coaxial or wafer-level package transmission line interconnect therebetween. Such coaxial or wafer-level package transmission line interconnect may carry signals from such transmit circuitry to such receive circuitry. Such intra-chip communication links may achieve single-cycle operation or multi-cycle operation. Single single-cycle operation may be conducive to synchronous FSM design methodologies while multi-cycle operation may be conducive to data transfers to and from memory.

Low-loss transmission line TDM communication link and system

A method for simulating a response of a circuit to an ESD input stimulus applied to the circuit includes the steps of: receiving a description of the circuit into a circuit simulation program, the circuit including at least one mutual inductance element indicative of magnetic coupling in the circuit; generating a linear approximation of nonlinear elements in the circuit at respective DC bias points of the nonlinear elements; obtaining a frequency domain transfer function of the circuit; obtaining a time domain impulse response of the circuit as a function of the frequency domain transfer function; integrating the time domain impulse response to yield a step response of the circuit, the step response being indicative of a response of the circuit to the ESD input stimulus; and analyzing the step response of the circuit to determine whether the circuit will operate within prescribed parameters corresponding to the circuit.

Circuit simulation using step response analysis in the frequency domain

Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate having an integrated circuit die attached thereto. The package includes a ESD shield attached to the substrate. The ESD shield configured to increase the ESD hardness of the package. The ESD shield can further serve to stiffen the package to prevent warping and operate as a heat spreader.

Semiconductor package having increased resistance to electrostatic discharge

Various embodiments of the present invention provide systems and methods for signal equalization, and in some cases analog to digital conversion. For example, an analog to digital converter is disclosed that includes a comparator bank that receives a reference indicator and is operable to provide a decision output based at least in part on a comparison of an analog input with a reference threshold corresponding to the reference indicator. A range selection filter is included that has a first adjustment calculation circuit and a second adjustment calculation circuit. The first adjustment calculation circuit is operable to calculate a first adjustment feedback value based at least in part on a speculation that the decision output is a first logic level, and the second adjustment calculation circuit is operable to calculate a second adjustment feedback value based at least in part on a speculation that the decision output is a second logic level. A selector circuit selects the first adjustment feedback to generate the reference indicator when the decision output is the first logic level, and selects the second adjustment feedback to generate the reference indicator when the decision output is the second logic level.

Systems and methods for speculative signal equalization

Various embodiments of the present invention provide systems and methods for analog to digital conversion. For example, a latch based analog to digital converter is disclosed that includes a first interleave with a set of comparators, a selector circuit and a latch. The set of comparators is operable to compare an analog input with respective reference voltages, and is synchronized to a clock phase. The selector circuit is operable to select an output of one of the set of comparators based at least in part on a selector input. A first interleave output is derived from the selected output. The latch receives a second interleave output from a second interleave and is transparent when the clock phase is asserted. The selector input includes an output of the latch.

Systems and methods for synchronous, retimed analog to digital conversion

Various embodiments of the present invention provide systems and methods for analog to digital conversion. For example, a retimed analog to digital converter is disclosed that includes a first set of sub-level interleaves and a second set of sub-level interleaves. The first set of sub-level interleaves includes a first sub-level interleave with a first set of comparators synchronized to a first clock phase, and a second sub-level interleave with a second set of comparators synchronized to a second clock phase. The second set of sub-level interleaves includes a third sub-level interleave with a third set of comparators synchronized to a third clock phase, and a fourth sub-level interleave with a fourth set of comparators synchronized to a fourth clock phase. A global interleave selects one of the first set of comparators based at least in part on an output from the second set of sub-level interleaves, and one of the third set of comparators based at least in part on an output from the first set of sub-level interleaves. In some instances of the aforementioned embodiments, an output of the first sub-level interleave and an output of the second sub-level interleave are synchronized to the third clock phase, and an output of the third sub-level interleave and an output of the fourth sub-level interleave are synchronized to the first clock phase.

An ESD protection circuit for protecting a host circuit coupled to a signal pad from an ESD event occurring at the signal pad includes at least one MEMS switch which is electrically connected to the signal pad. The MEMS switch includes a first contact structure adapted for connection to the signal pad, and a second contact structure adapted for connection to a voltage supply source. The first and second contact structures are coupled together during the ESD event for shunting an ESD current from the signal pad to the voltage supply source. The first and second contact structures are electrically isolated from one another in the absence of the ESD event. At least one of the first and second contact structures includes a passivation layer for reducing contact adhesion between the first and second contact structures.

Electrostatic discharge protection circuit employing a micro electro-mechanical systems (MEMS) structure

A system and method for protecting a circuit. The system includes a protection circuit that includes an inverter and a capacitor coupled to the inverter. The inverter and the capacitor are implemented using logic circuits of a circuit core, and the inverter shunts electrostatic discharge ESD current through the capacitor. According to the system and method disclosed herein, because the protection circuit shunt circuit shunts ESD current using logic circuits of the circuit core, ESD protection is achieved while not requiring large FETs. Also, the protection circuit protects circuits against ESD events that conventional FET cannot protect.

Circuit protection system

Various embodiments of the present invention provide systems and methods for analog to digital conversion. For example, a pipelined analog to digital converter is disclosed that includes two or more comparators. A first of the comparators is operable to compare an analog input to a first voltage reference upon assertion of the first clock, and a second of the comparators is operable to compare the analog input to a second voltage reference upon assertion of the second clock. The pipelined analog to digital converters further include a multiplexer tree with at least a first tier multiplexer and a second tier multiplexer. The first tier multiplexer receives an output of the first comparator and an output of the second comparator, and the second tier multiplexer receives an output derived from the first tier multiplexer. The second tier multiplexer provides an output bit. A bit enable set is used as a selector input to the first tier multiplexer and the second tier multiplexer, and the bit enable set includes one or more output bits from preceding bit periods.

Systems and methods for pipelined analog to digital conversion

An improvement to a digital integrated circuit of the type having a functional circuit that is susceptible to damage from an electrostatic discharge. An electrostatic discharge protection element is placed in series with the functional circuit and disposed upstream in a normal direction of current flow from the functional circuit. The electrostatic discharge protection element includes at least one of a resistive choke that exhibits thermal runaway and an inductive choke.

Electrostatic discharge series protection

Methods and structure for improved design remediation for previously inexplicable damage to core circuits of an application circuit design caused by CDM ESD events. Features and aspects hereof note that such previously inexplicable damage to core circuits of an application circuit design is caused by inductive coupling between the non-core circuits and the core circuits of an application circuit design. Features and aspects hereof automatically alter an application circuit design to provide remediation by various techniques to reduce the magnitude of such inductive coupling and to thereby reduce susceptibility of the application circuit to damage from CDM ESD events. The modifications may be enforced as rules during initial design of the application circuit or as reconfiguration of a design in response to simulation to discover inappropriate coupling in the design.

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Fremont, CA, United States of America

William Loh