Intel Corporation

Industrial Climate Solutions, Inc.

William L Hargrove

Leopoldo D Yau

Roy J Pellegrin

Robert S Chau

Chi-Hwa Tsang

Kerry L Spurgin

Craig Dugan

Deborah A Parsons

Ganesan Radhakrishnan

Robert S K Chau

Zhenshuo Bobby Liu

A novel process for forming a robust, sub-100 &angst; oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 &angst;. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 &angst;. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 &angst;, a composite oxide stack is used which comprises 40-90 &angst; of pad oxide formed using the above novel process, and 60-200 &angst; of deposited oxide.

Process for forming a thin oxide layer

A method of forming and refilling a trench in a substrate. First a trench is formed in the substrate. The trench is then refilled with a conformal material. Next, a recess is etched into the top portion of the refilled trench. The recess is then refilled with a second material until the refilled recess and substrate are substantially planar.

Trench isolation with planar topography and method of fabrication

A novel process for forming a robust, sub-100 .ANG. oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen and 13% trichloroethane. Next, a wet oxidation in pyrogenic steam is performed to produce a total oxide thickness of approximately 80 .ANG.. The oxide layer formed is ideally suited for use as a high integrity gate oxide below 100 .ANG.. The invention is particularly useful in devices with advanced, recessed field isolation where sharp silicon edges are difficult to oxidize. For an oxide layer of more than 100 .ANG., a composite oxide stack is used which comprises 40-90 .ANG. of pad oxide formed using the above novel process, and 60-200 .ANG. of deposited oxide.

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Sherwood, OR, United States of America

William L Hargrove