Cypress Semiconductor Corporation

Silicon Magnetic Systems

Waterbit, Inc.

William Koutny

Krishnaswamy Ramkumar

Fredrick B Jenne

Craig Nemecek

Ritu Shrivastava

Andrew J Wright

Thurman John Rodgers

Manu Pillai

Helen L Chung

Arya Bhattacherjee

Leif Chastaine

An agricultural sensing system includes multiple sensor and/or actuator modules configured to communicate with a relay unit. The sensor and/or actuator modules are powered using solar energy and contain no batteries. The modules feature sleep modes in which some circuits are placed in a low energy mode to conserve energy and remove the need for batteries. Communications to or from the relay unit are optionally timed to avoid interference between transmissions from different sensor and/or actuator modules. The relay units are configured to relay sensor data and send commands to the sensor and/or actuator modules.

Remote sensor system

Nonvolatile charge trap memory devices with deuterium passivation of charge traps and methods of forming the same are described. In one embodiment, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device. A gate stack overlies the channel, the gate stack comprising a tunneling layer, a trapping layer, a blocking layer, a gate layer; and a deuterated gate cap layer. The gate cap layer has a higher deuterium concentration at an interface with the gate layer than at surface of the gate cap layer distal from the gate layer. In certain embodiments, the channel comprises polysilicon or recrystallized polysilicon. Other embodiments are also described.

Deuterated film encapsulation of nonvolatile charge trap memory device

A nonvolatile charge trap memory device with deuterium passivation of charge traps and method of manufacture. Deuterated gate layer, deuterated gate cap layer and deuterated spacers are employed in various combinations to encapsulate the device with deuterium sources proximate to the interfaces within the gate stack and on the surface of the gate stack where traps may be present.

A method is provided which includes creating a plasma from a gas mixture including diatomic nitrogen gas and a gas comprising silicon. In addition, the method includes exposing a microelectronic topography to the plasma to form a silicon nitride layer thereon. In some cases, the method may include forming the silicon nitride layer at a temperature less than approximately 300&deg; C. Furthermore, the method may include subsequently processing the microelectronic topography at a temperature greater than or equal to approximately 250&deg; C. such that a stress change of less than approximately 1.0&times;10 dynes/cm occurs within the silicon nitride layer. In addition, a microelectronic topography is provided which has a silicon nitride layer with a concentration of diatomic hydrogen that is at least one order of magnitude lower than a concentration of diatomic hydrogen within a silicon nitride layer formed from a plasma generated from ammonia.

Method for depositing silicon nitride

A process for minimizing bird's beak in local oxidation of silicon which is compatible with high density (VLSI) semiconductor devices is disclosed. A pad oxide is nitridized using rapid thermal nitridization, which works quickly with minimal thermal cycling of the wafer. A silicon nitride film is then deposited over the nitridized oxide. Both films are exposed to dry plasma etching which gives more consistent results than wet methods. The field oxide is then grown and finally the masking films of the nitridized oxide and silicon nitride are removed, whereby field oxides are grown with minimal bird's beak, and minimal damage to the wafer with a small number of steps. The pad oxide may be grown in the same rapid thermal annealer used for the rapid thermal nitridization. Both cycles (pad oxide growth and nitridization of the pad oxide) can be integrated to 'one' cycle and performed sequentially in the same rapid thermal annealer to increase throughput and improve device quality.

Growing community of inventors

Santa Clara, CA, United States of America

William Koutny