Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

William John Nagy

Kuo-Hua Lee

Alan Sangone Chen

Yih-Feng Chyan

Yi Ma

Samir Chaudhry

Chung Wai Leung

Michael Scott Carroll

The present invention provides a method of manufacturing a bipolar transistor. The method may comprise forming a collector in a semiconductor wafer substrate, forming a base in the collector, implanting an oxide region within said collector and over the base, and forming an emitter over the substrate such that the oxide region is located between the emitter and the base.

Method of making a bipolar transistor with an oxygen implanted emitter window

The present invention provides a static random-access memory (SRAM) device that comprises a substrate having an insulator and a gate formed thereover, where the insulator electrically insulates the gate from the substrate, and a local conductive layer that is formed on the gate structure and that extends from the gate and onto the substrate. The local conductive layer is connectable to a conductive interconnect structure to connect the gate electrically to an other portion of the SRAM device. The SRAM device, in one embodiment, is part of a complementary metal oxide semiconductor (CMOS). However, it will be appreciated by those who are of ordinary skill the art that the present invention may be used in various types of metal oxide semiconductors and similar semiconductor devices in general. Therefore, in an aspect of the present invention, there is provided a local conductive interconnect structure that provides a electrical path to which the gate may be electrically connected to other portions of the SRAM device without the need of multiple interconnect structures found in prior art devices. Thus, the overall cell size of the SRAM device may be substantially decreased such that it can be used in applications that require smaller cell sizes.

Static random-access memory device having a local interconnect structure

A bipolar fabrication process, illustratively suited for integration into a conventional CMOS process to thereby form a BiCMOS integrated circuits is disclosed. The collector and base are formed through multiple implants and a single masking step to thereby provide a continuous low resistance collector region.

Process for making bipolar having graded or modulated collector

Growing community of inventors

Orlando, FL, United States of America

William John Nagy