Ewha University-Industry Collaboration Foundation

Lg Electronics Inc.

William Jo

Hye Ri Jung

Yun Ae Cho

Ah-Reum Jeong

Gee-Yeong Kim

Hye Jin Jin

The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

Method for fabrication of halide perovskite single crystal comprising low-temperature solvation process

The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.

Heterojunction optoelectronic device and method of manufacturing the same

The present disclosure relates to a resistive switching element in which polarization of a ferroelectric material layer and electron-hole separation phenomenon of a two dimensional semiconducting material layer are combined to induce resistive switching phenomenon, and a photovoltaic device such as a solar cell, including the resistive switching element.

Resistive switching element and photovoltaic device including the same

The present invention relates to a CZTSe-based composite thin film, a method for preparing the CZTSe-based composite thin film, a solar cell using the CZTSe-based composite thin film, and a method for preparing the solar cell using the CZTSe-based composite thin film.

CZTSe-based thin film and method for preparing the same, and solar cell using the same

A nano-ionic memory device is provided. The memory device includes a substrate, a chemically inactive lower electrode provided on the substrate, a solid electrolyte layer provided on the lower electrode and including a silver (Ag)-doped telluride (Te)-based nano-material, and an oxidizable upper electrode provided on the electrolyte layer.

Method of fabricating Ag-doped Te-based nano-material and memory device using the same

System and method for writing/reading data, the method including the steps of causing polarization inversion at domains of the ferroelectric thin film using a conductive nano tip for writing the data, and reading the data using a non-conductive nano tip.

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Seoul, South Korea

William Jo