Seagate Technology Incorporated

William J O'Kane

Robert William Lamberton

Declan Macken

Mark Anthony Gubbins

Sining Mao

Patrick Joseph Ryan

James Keith Price

Alan Biggar Johnston

William Paul Vavra

Ge Yi

Paul M Dodd

Susan Jane Tara Murdoch

Thomas K McLaughlin

Songsheng Xue

A perpendicular writer of the present invention comprises a main pole connected to two return poles and further includes one or more shorting shields thereby reducing erasure field on double layer perpendicular media. The perpendicular writer may include side shorting shields connecting the first and second return poles thereby modifying the crosstrack field gradient. Additionally, the perpendicular writer may include a top shorting shield modifying the downtrack gradient and may additionally include a bottom shorting shield for further reduction of erasure fields. The distance between the main pole and the shorting shields may be modified to customize the write field gradient.

Head for perpendicular recording with reduced erasure

The present invention includes magnetic write elements with portions formed a nanophase high magnetic moment material to enable further increases in areal density in magnetic recording. The nanophase deposited high magnetic moment material comprises coated nanoclusters and nanolaminated cluster films that are deposited to form nanophase high magnetic moment material portions of a write pole and SUL layer in perpendicular recording media. The nanophase write poles exhibit high magnetic moments and are generally compatible with conventional writer head fabrication techniques.

Nanoclustered magnetic materials for high moment write pole applications

A spin polarization enhancement artificial (SPEA) magnet comprises combinations of positive spin asymmetry interfaces and inverse spin asymmetry interfaces arranged antiferromagnetically such that current passed through the SPEA magnet has enhanced spin polarization. The SPEA magnet additionally may combine bulk material properties of electron scattering to either supplement or replace the interfacial spin differentiation. A basic functional unit of the SPEA magnet includes two ferromagnetic layers separated by two spacer layers. Each spacer forms an interface such that adjacent ferromagnetic layers produce different spin symmetry. Antiferromagnetic arrangement of adjacent ferromagnetic layers coordinates the different spin symmetries such that a single spin state is selected and also provides additional stabilization to the SPEA magnet.

Spin polarization enhancement artificial magnet

The invention offers a structure that includes a substrate with a top surface and a bottom surface, an etched dielectric layer having sidewalls and an upper surface, wherein the etched dielectric layer with a thickness of v, is positioned upon a first portion of the top surface of the substrate but not positioned upon a second portion of the top surface of the substrate having a width equal to x, an atomic layer deposited (ALD) film with a thickness of y, positioned upon the upper surface of the etched dielectric layer, the sidewalls of the etched dielectric layer, and the second portion of the top surface of the substrate, and a trench formed by the atomic layer with a width equal to x&#x2212;2y. The invention also offers a method of forming a structure with a trench that includes the steps of depositing a dielectric layer on a substrate, forming a patterned photoresist on the dielectric layer, forming a space having a width x, by etching the dielectric layer, removing the patterned photoresist to form a gap having sidewalls and a bottom, and depositing an atomic layer with a thickness of y on the etched dielectric layer, and the sidewalls and the bottom of the gap, wherein a trench is formed by the atomic layer deposited on the sidewalls and bottom of the gap.

Combined atomic layer deposition and damascene processing for definition of narrow trenches

The invention provides a magnetic sensor having a first opposing pair and a second opposing pair of resistive elements configured in a Wheatstone bridge, wherein the resistive elements are a synthetic antiferromagnetic giant magnetoresistive sensor having a reference layer and a pinned layer of different thicknesses, wherein the first opposing pair has a net magnetic moment that is opposite to that of the second opposing pair, and wherein the first opposing pair has a thicker reference layer than pinned layer, and the second opposing pair has a thicker pinned layer than reference layer. Other embodiments of the invention have resistive elements that are opposingly bilayer and trilayer synthetic antiferromagnetic giant magnetoresistive sensors, or opposingly synthetic and standard antiferromagnetic giant magnetoresistive sensors.

Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments

Growing community of inventors

Limavady, Ireland

William J O'Kane