British Telecommunications Public Limited Company

British Telecommunications Corporation

William J Devlin

Ian F Lealman

Simon Cole

David M Cooper

Andrew W Nelson

Paul C Spurdens

Joseph J Isaac

Semiconductor laser amplifiers

In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.

Method of manufacturing semiconductor structures

An optical amplifier takes the form of a semiconductor laser with coatings on its two facets. The coating takes the form of an anti-reflective coating, e.g. an oxide of Y, Gd, Nd, or La, to reduce the reflectivity and a thin interlayer, e.g. Al.sub.2 O.sub.3, to enhance compatibility between the laser and the anti-reflective coating.

Opto-electronic devices

Growing community of inventors

Ipswich, United Kingdom

William J Devlin