E.i. Dupont De Nemours and Company

North Carolina State University

Cda Processing Limited Liability Company

Other

C.o.r.e. Tec Inc.

William J Borland

Daniel Irwin Amey, Jr

Saul Ferguson

Seigi Suh

David Ross McGregor

Jon-Paul Maria

Diptarka Majumdar

Jon Fredrick Ihlefeld

Ian Burn

G Sidney Cox

Karl Hartmann Dietz

Cengiz Ahmet Palanduz

Alan Frederick Carroll

Howard David Glicksman

Attiganal Narayanaswamy Sreeram

Barry Edward Taylor

Sounak Banerji

Olga L Renovales

Jon Paul Maria

Matthew C Snogren

Richard H Snogren

Kenneth Warren Hang

Yasuo Yamamoto

Carl Baasun Wang

Angus Ian Kingon

Esther Kim

Lorri P Drozdyk

Hena Pyada

J Stan Erickson

Ryosuke Kuwada

Noboru Nishii

Christopher Allen Gross

Omega N Mack

Daniel I Amey, Jr

Timothy R Overcash

Richard Ray Traylor

Alton Bruce Jones, Iii

A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making photovoltaic cells with base metal containing buss bars are also disclosed.

Photovoltaic devices with base metal buss bars

Disclosed are methods of making a dielectric on a metal foil, and a method of making a large area capacitor that includes a dielectric on a metal foil. A first dielectric layer is formed over the metal foil by physical vapor deposition, and a dielectric precursor layer is formed over the first dielectric layer by chemical solution deposition. The metal foil, first dielectric layer and dielectric precursor layer are prefired at a prefiring temperature in the range of 350 to 650&#xb0; C. The prefired dielectric precursor layer, the first dielectric layer and the base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200&#xb0; C.

Thin film capacitors on metal foils and methods of manufacturing same

Disclosed are methods of making multi-element, finely divided, metal powders containing one or more reactive metals and one or more non-reactive metals. Reactive metals include metals or mixtures thereof from titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), vanadium (V), nickel (Ni), cobalt (Co), molybdenum (Mo), manganese (Mn), and iron (Fe). Non-reactive metals include metals or mixtures such as silver (Ag), tin (Sn), bismuth (Bi), lead (Pb), antimony (Sb), zinc (Zn), germanium (Ge), phosphorus (P), gold (Au), cadmium (Cd), berrylium (Be), tellurium (Te).

Multi-element metal powders for silicon solar cells

Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, beryllium, and combinations thereof.

Compositions and processes for forming photovoltaic devices

A photovoltaic cell such as a solar cell is disclosed. The cell comprises (a) a semiconductor substrate having a front surface, (b) one or more anti-reflection coating layers on the front surface of the semiconductor substrate, (c) a plurality of silver-containing fingers in contact with the one or more anti-reflection coating layers and in electrical contact with the semiconductor substrate; and (d) one or more base metal containing buss bars each in contact with the one or more anti-reflection coating layers and the silver-containing fingers. The base metal may be selected from one or more of copper, nickel, lead, tin, iron, indium, zinc, bismuth and cobalt. Methods for making protovoltaic cells with base metal containing buss bars are also disclosed.

Processes and compositions for forming photovoltaic devices with base metal buss bars

A printed wiring board semiconductor package or PWB power core comprising singulated capacitors embedded on multiple layers of the printed wiring board semiconductor package wherein at least a part of each embedded capacitor lies within the die shadow and wherein the embedded, singulated capacitors comprise at least a first electrode and a second electrode. The first electrodes and second electrodes of the embedded singulated capacitors are interconnected to the Vcc (power) terminals and the Vss (ground) terminals respectively of a semiconductor device. The size of the embedded capacitors are varied to produce different self-resonant frequencies and their vertical placements within the PWB semiconductor package are used to control the inherent inductance of the capacitor-semiconductor electrical interconnections so that customized resonant frequencies of the embedded capacitors can be achieved with low impedance.

Device and method for reducing impedance

Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Schottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Schottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.

Processes for forming photovoltaic devices

A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

Glass flux assisted sintering of chemical solution deposited thin dielectric films

A device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor wherein said embedded singulated capacitor comprises at least a first electrode and a second electrode and wherein said embedded singulated capacitor is positioned on the outer layer of the power core so that at least one Vcc (power) terminal and at least one Vss (ground) terminal of a semiconductor device can be directly connected to at least one first and at least one second electrode, respectively and wherein the first and second electrode of the singulated capacitor is interconnected to the first and second electrode respectively of an external planar capacitor embedded within a printed wiring motherboard.

Power core devices and methods of making thereof

Provided herein are devices comprising a printed wiring board that comprise, singulated capacitors fabricated from known good, thin-film, fired-on-foil capacitors. Provided are methods of incorporating the singulated capacitors into the build-up layers of a printed wiring board to minimize impedance. The singulated capacitors have a pitch that allows each power and ground terminal of an IC to be directly connected to a power and ground electrode, respectively, of its own singulated capacitor. Using a feedstock of known good, fired-on-foil capacitors allows for improved PWB yield.

Methods for integration of thin-film capacitors into the build-up layers of a PWB

Methods of making thin film capacitors formed on foil by forming onto a thin film dielectric in a single deposition event an integrally complete top electrode having a minimum thickness of at least 1 micron.

Method of making thin-film capacitors on metal foil using thick top electrodes

This invention relates to a capacitive/resistive device, which may be embedded within a layer of a printed wiring board. Embedding the device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. More specifically, the device, comprises a first metallic foil; a second metallic foil; a first electrode formed from the first metallic foil; a dielectric disposed over the first electrode; a resistor element formed on and adjacent to the dielectric; a conductive trace; and a second electrode formed from the second metallic foil and disposed over the dielectric and in electrical contact with the resistor element, wherein the dielectric is disposed between the first electrode and the second electrode and wherein said dielectric comprises an unfilled polymer of dielectric constant less than 4.0.

Capacitive/resistive devices, organic dielectric laminates and printed wiring boards incorporating such devices, and methods of making thereof

The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof and to capacitors comprising such compositions.

Acceptor doped barium titanate based thin film capacitors on metal foils and methods of making thereof

The present invention relates to a power core comprising: at least one embedded surface mount technology (SMT) discrete chip capacitor layer comprising at least one embedded SMT discrete chip capacitor; and at least one planar capacitor laminate; wherein at least one planar capacitor laminate serves as a low inductance path to supply a charge to at least one embedded SMT discrete chip capacitor; and wherein said embedded SMT discrete chip capacitor is connected in parallel to said planar capacitor laminate.

A method of embedding thick-film fired-on-foil capacitors includes entirely covering the dielectric with an encapsulating electrode to avoid cracking in the dielectric due to shrinkage and temperature coefficient of expansion differences between the electrode and dielectric.

Growing community of inventors

Chapel Hill, NC, United States of America

William J Borland