Delphi Technologies, Inc.

Delco Electronics Corporation

Exelis Inc.

Google Inc.

William J Baney

John Carl Christenson

Dan W Chilcott

Douglas Ray Sparks

Ralph S Taylor

Timothy A Vas

Steven E Staller

Dan Wesley Chilcott

Stephen P Long

Timothy M Betzner

John D Myers

John Emmett Freeman

James Werstler Siekkinen

George M Queen

Heather Hude

Brenda Biser Baney

Seyed R Zarabadi

John Richard Troxell

An image intensifier tube includes a collimator having multiple channels for receiving electrons from a photocathode layer, and a microchannel plate (MCP) having multiple channels for receiving electrons from the collimator. An ion barrier film (IBF) is disposed on top of an input side of the MCP, in which the IBF includes a small amount of conductive material. The IBF may include alumina doped with chromium oxide, or manganese oxide, or any other conductive material. The small amount of conductive material includes 1% to 5% of conductive material in a layer of non-conductive material.

Image intensifier having an ion barrier with conductive material and method for making the same

A ceramic short circuit resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The capacitor that exhibits a benign failure mode in which a multitude of discrete failure events result in a gradual loss of capacitance. Each event is a localized event in which localized heating causes an adjacent portion of one or both of the electrodes to vaporize, physically cleaning away electrode material from the failure site. A first metal electrode, a second metal electrode, and a ceramic dielectric layer between the electrodes are thin enough to be formed in a serpentine-arrangement with gaps between the first electrode and the second electrode that allow venting of vaporized electrode material in the event of a benign failure.

Shapeable short circuit resistant capacitor

Charged particle sensing devices and methods of forming charged particle sensing devices are provided. The charged particle sensing device includes a source of charged particles, a plurality of collector electrodes for receiving a first portion of the charged particles and a grid formed around and spaced apart from the plurality of collector electrodes. The grid receives a second portion of the charged particles and directs backscattered charged particles, generated responsive to the second portion, to adjacent collector electrodes.

Charged particle collector for a CMOS imager

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

Method of manufacturing a shapeable short-resistant capacitor

An MEMS device including a semiconductor substrate having an upper and lower surface, and a support structure disposed at least partially in the semiconductor substrate. The support structure includes a plurality of support members oriented to define a plurality of cells in the semiconductor substrate. A thermally isolated membrane is disposed above the upper surface of the semiconductor substrate and is supported by the support structure. At least one functional component is mounted to the membrane. The plurality of cells are located substantially beneath the at least one functional component.

Thermally isolated membrane structure

A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.

Technique for manufacturing silicon structures

A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.

Process of forming a capacitative audio transducer

A lead-containing glass material of the type suitable for use in a wafer bonding process, wherein the moisture resistance of the glass material is increased by the presence of a lead phosphate coating on an outer exposed surface of the material, thereby acting as a barrier to reaction of moisture with the lead of the glass material. A source of reactive phosphate ions is applied to the glass material so as to spontaneously form the desired lead phosphate coating.

Glass frit bond and process therefor

Process of making an all-silicon microphone

Glass frit bond line

An angular accelerometer having a substrate, a fixed electrode supported on the substrate and including a first plurality of fixed capacitive plates, and a ring-shaped rotational inertia mass substantially suspended over a cavity and including a plurality of movable capacitive plates arranged to provide a capacitive coupling with the first plurality of fixed capacitive plates. A central member is fixedly attached to the substrate. A plurality of support arms extend between the central member and the ring-shaped mass for supporting the mass relative to the fixed electrode during rotational movement of the mass. The angular accelerometer also includes an input electrically coupled to the fixed electrode for receiving an input signal, and an output coupled to the mass for providing an output signal which varies as a function of the capacitive coupling and is indicative of angular acceleration.

Angular accelerometer

An all-silicon monolithic capacitive absolute pressure-sensing device and method for making the same. The device employs a single-crystal silicon diaphragm that serves at a flexible capacitor plate of a variable capacitor. The diaphragm is bonded to a single-crystal silicon wafer to overlie a cavity etched into the wafer. A fixed capacitor plate of the variable capacitor is formed by a heavily-doped region at the bottom of the cavity. A thin dielectric layer is grown on the fixed capacitor plate to complete the capacitor. The cavity has a minimal depth such that the fixed capacitor plate provides overpressure protection for the diaphragm. At least a portion of the operating range of the pressure sensor occurs while the diaphragm is contacting the doped region. As a result, the capacitive output signal of the pressure sensor is produced by changes in contact area between the diaphragm and a thin dielectric situated on the doped region in response to pressure applied to the diaphragm.

Growing community of inventors

Kokomo, IN, United States of America

William J Baney