General Electric Company

First Solar, Inc.

Lockheed Martin Corporation

Ge Homeland Protection, Inc.

William Hullinger Huber

Joseph John Shiang

Yong Liang

Jongwoo Choi

Holly Ann Blaydes

Kristian William Andreini

Eugene Thomas Hinners

Adam Fraser Halverson

Kaustubh Ravindra Nagarkar

Vernon Jensen

Hongying Peng

Gang Xiong

Anil Raj Duggal

Peter Michael Edic

James Anthony Ruud

Mark Ernest Vermilyea

Ching-Yeu Wei

Robert Gideon Wodnicki

John Scott Price

William Edward Burdick, Jr

Colin Richard Wilson

Anthony Yu-Chung Ku

Daniel Eduardo Groszmann

Vidya Ramaswamy

Hongbo Cao

Sachit Grover

Andrei Los

Roger Malik

Xiaoping Li

Dingyuan Lu

Qianqian Xin

Radislav Alexandrovich Potyrailo

Steven Francis LeBoeuf

Christopher James Kapusta

Kevin Matthew Durocher

Wei Zhang

Raymond Albert Fillion

Jeffrey Michael Ashe

Michael Andrew De Rooij

Charles Edward Baumgartner

Reed Roeder Corderman

Charles S Korman

David Martin Mills

Aaron Judy Couture

Rui Chen

Christopher Allen Nafis

Forrest Frank Hopkins

Markus Gloeckler

Zhibo Zhao

Kevin L Robinson

Jon Thomas Lea

Todd Ryan Tolliver

George Charles Sogoian

Feng Liao

Ji Ung Lee

Ashraf Said Atalla

Kenneth Ring

Jinbo Cao

Gopal Mor

Laurent Jacques Node-Langlois

Jason Kephart

Alexei Vasilievich Vertiatchikh

Bahman Ebrahimi Kashef

Mark Hendryx

James Becker

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

Photovoltaic devices and method of making

According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×10cm. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same

Photovoltaic devices having transparent contact layers are described herein.

Transparent conducting layers and photovoltaic devices including the same

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

A photovoltaic device () can include an absorber layer (). The absorber layer () can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4&#xd7;10cm. The absorber layer () can include oxygen in a central region of the absorber layer (). The absorber layer () can include an alkali metal in the central region of the absorber layer (). Methods for carrier activation can include exposing an absorber layer () to an annealing compound in a reducing environment (). The annealing compound () can include cadmium chloride and an alkali metal chloride.

Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same

A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5&#xd7;10/cmto 2.5&#xd7;10/cmvia any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and Pat higher P(=I*Vproduct) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased I, increased V, or both.

Ag-doped photovoltaic devices and method of making

A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed on the buffer layer; and an interlayer interposed between the transparent conductive oxide layer and the window layer. The interlayer includes a metal species, wherein the metal species includes gadolinium, beryllium, calcium, barium, strontium, scandium, yttrium, hafnium, cerium, lutetium, lanthanum, or combinations thereof. A method of making a photovoltaic device is also presented.

A system and method for monitoring a subject are presented. The system includes a sensing device including at least one magnetic source to generate a magnetic field and an array of magnetic sensors disposed within the magnetic field. The sensor array obtains a plurality of magnetic field measurements at a plurality of locations along a vessel carrying a fluid including one or more magnetic particles. Further, the system includes a processing subsystem communicatively coupled to the sensing device, where the processing subsystem determines variations in the measurements caused by magnetization-relaxation of the magnetic particles based on a coupled model that defines behavior of the fluid in the varying magnetic field based on principles of magnetization-relaxation, bulk motion of the magnetic particles towards a determined gradient of the magnetic field, magnetostatics, and conservation of momentum. The processing subsystem estimates values of one or more desired parameters based on the determined variations.

Systems and methods for improved physiological monitoring

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes selenium, and an atomic concentration of selenium varies non-linearly across a thickness of the absorber layer. A method of making a photovoltaic device is also presented.

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William Hullinger Huber