Soraa, Inc.

Lytro, Inc.

Sorra, Inc.

William Houck

Arpan Chakraborty

Michael Ragan Krames

Mark Philip D'Evelyn

Frank Michael Steranka

Troy A Trottier

James Stephen Speck

Colvin Pitts

Mathew C Schmidt

Yonggang Ha

A capture system may capture light-field data representative of an environment for use in virtual reality, augmented reality, and the like. The system may have a plurality of light-field cameras arranged to capture a light-field volume within the environment, and a processor. The processor may use the light-field volume to generate a first virtual view depicting the environment from a first virtual viewpoint. The light-field cameras may be arranged in a tiled array to define a capture surface with a ring-shaped, spherical, or other arrangement. The processor may map the pixels captured by the image sensors to light rays received in the light-field volume, and store data descriptive of the light rays in a coordinate system representative of the light-field volume.

Capturing light-field volume image and video data using tiled light-field cameras

An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

System and method for providing color light sources in proximity to predetermined wavelength conversion structures

A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Gallium-nitride-on-handle substrate materials and devices and method of manufacture

A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.

Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices

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Fremont, CA, United States of America

William Houck