Micron Technology Incorporated

Skyera, LLC

Round Rock Research, LLC

Apple Inc.

Western Digital Technologies, Inc.

Micro Technology, Inc.

Tachyum Ltd.

Sandisk Technologies Inc.

William Henry Radke

Peter Sean Feeley

Victor Y Tsai

Neal Anthony Galbo

Zhenlei Shen

Vishal Sarin

Robert N Leibowitz

Tommaso Vali

Brady L Keays

Shuba Swaminathan

Radoslav Danilak

James Cooke

Violante Moschiano

Frankie F Roohparvar

Michael Murray

Pinchas Herman

Jung-Sheng Hoei

Michele Incarnati

Dzung Huu Nguyen

James R Peterson

Krishnam R Datla

Sivagnanam Parthasarathy

Mustafa Nazmi Kaynak

Patrick Robert Khayat

Giovanni Santin

Theodore T Pekny

Siamack Nemazie

Giovanni Naso

Martin Ragnar Furuhjelm

John S Geldman

Massimo Rossini

Robin Sarno

Laszlo Borbely-Bartis

Bob Leibowitz

Ken Kannampuzha

Chad A Cobbley

James D Kelly

Atif Matin Sarwari

Jonathan Pabustan

Steven J Sfarzo

Vijay Karamcheti

Rodney Norman Mullendore

David Christopher Pruett

Krishnam R Dalta

Rodney Mullendore

Chi To

Laszlo Borbely

John Geldman

A memory stick configured for use with a processor in a computer is provided. The memory stick includes a printed circuit board with first and second sides, each of the first and second sides including eighteen memory chips, each of the memory chips being an ×8 DRAM chip; the eighteen memory chips being distributed into first, second, third and fourth rows, the first row and the second row being on a left half of the printed circuit board and the third and fourth row being on a right half of the printed circuit board; and the printed circuit board including at least 400 pins including at least 16 pins for ECC bits and at least 128 pins for data bits; wherein at least the memory chips and the 128 pins for data bits establish a 128-bit data width to communicate.

Layout for dual in-line memory to support 128-byte cache line processor

The present disclosure includes apparatuses and methods related to stopping criteria for layered iterative error correction. A number of methods can include receiving a codeword with an error correction circuit, iteratively error correcting the codeword with the error correction circuit including parity checking the codeword on a layer-by-layer basis and updating the codeword after each layer. Methods can include stopping the iterative error correction in response to a parity check being correct for a particular layer.

Stopping criteria for layered iterative error correction

A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure different blocks of the plurality of blocks of memory cells in different configurations, which can include blocks configured to include only groups of user data memory cells for storing user data, blocks configured to include only groups of overhead data memory cells for storing error correction code (ECC) data, and blocks configured to include groups of user data memory cells and groups of overhead data memory cells.

Memory devices having differently configured blocks of memory cells

A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure a first block of memory cells of the plurality of blocks of memory cells in a first configuration comprising one or more groups of overhead data memory cells, to configure a second block of memory cells of the plurality of blocks of memory cells in a second configuration comprising a group of user data memory cells and a group of overhead data memory cells, and to configure a third block of memory cells of the plurality of blocks of memory cells in a third configuration comprising only a group of user data memory cells. The group of overhead data memory cells of the second block of memory cells has a different storage capacity than at least one group of overhead data memory cells of the one or more groups of overhead data memory cells of the first block of memory cells.

Memory packages, memory modules, and circuit boards are described. In an embodiment, single channel memory packages are mounted on opposite sides of a circuit board designed with a first side also designed to accept dual channel memory packages. Alternatively, dual channel memory packages may be mounted on a first side of a circuit board that is also designed to accept single channel packages on opposite sides.

Dual-sided memory module with channels aligned in opposition

The present disclosure includes methods, devices, and systems for state change in systems having devices coupled in a chained configuration. A number of embodiments include a host and a number of devices coupled to the host in a chained configuration. The chained configuration includes at least one device that is not directly coupled to the host. The at least one device that is not directly coupled to the host is configured to change from a first communication state to a second communication state responsive to receipt of a command from the host.

State change in systems having devices coupled in a chained configuration

Memory devices and methods are described and shown that are capable of being configured in a chain. In one configuration, a single data input port and a single data output port are utilized at a host to communicate with the chain of memory devices. Methods for assigning identifiers to memory devices in the chain are described that include detection of a presence or absence of downstream memory devices. In selected examples, identifiers are assigned sequentially to memory devices in the chain until no additional downstream memory devices are detected.

Chained bus memory device

A memory device has a plurality of individually erasable blocks of memory cells and a controller configured to configure a first block of the plurality of blocks of memory cells in a first configuration comprising one or more groups of overhead data memory cells, to configure a second block of the plurality of blocks of memory cells in a second configuration comprising a group of user data memory cells and a group of overhead data memory cells, and to configure a third block of the plurality of blocks of memory cells in a third configuration comprising only a group of user data memory cells. The group of overhead data memory cells of the second block of memory cells has a different storage capacity than at least one group of overhead data memory cells of the one or more groups of overhead data memory cells of the first block.

A storage cartridge may include a storage controller comprising a single PCIe port and a PCIe switch. The PCIe switch may include a first PCIe port communicatively coupled to a first PCIe fabric, a second PCIe port communicatively coupled to a second, different PCIe fabric, and a third PCIe port communicatively coupled to the single PCIe port of the storage controller. The first PCIe port and the second PCIe port may be configured to be selectively communicatively coupled to a non-transparent bridge (NTB) of the PCIe switch.

Dual-ported PCI express-based storage cartridge including single-ported storage controllers

Apparatuses and methods for inferring threshold voltage distributions associated with memory cells via interpolation are described herein. A number of embodiments include determining soft data for a group of memory cells each programmed to one of a number of data states, wherein the soft data comprises a number of different soft data values, determining a quantity of memory cells associated with each of the different soft data values, and inferring at least a portion of a threshold voltage distribution associated with the group of memory cells via an interpolation process using the determined quantities of memory cells associated with each of the different soft data values.

Inferring threshold voltage distributions associated with memory cells via interpolation

Some embodiments include apparatuses and methods having first memory cells, a first access line configured to access the first memory cells, second memory cells, and a second access line configured to access the second memory cells. One of such apparatuses can include a controller configured to cause data to be stored in a memory portion of the first memory cells, to cause a first portion of an error correction code associated with the data to be stored in another memory portion of the first memory cells, and to cause a second portion of the error correction code to be stored in the second memory cells. Other embodiments including additional apparatuses and methods are described.

Apparatuses and methods including error correction code organization

Growing community of inventors

Los Gatos, CA, United States of America

William Henry Radke