Intel Corporation

Chips and Technologies, Llc.

William Harry Nale

Debendra Das Sharma

Robert G Blankenship

Venkatraman Iyer

Arvind A Kumar

Raj K Ramanujan

Yen-Cheng Liu

Simon P Johnson

Robert J Safranek

Herbert H Hum

Darren S Jue

Ashish Gupta

Vedaraman Geetha

Bahaa Fahim

Jeffrey Charles Swanson

Aaron T Spink

Fulvio Spagna

Rahul R Shah

Robert H Beers

Jeff Willey

Sitaraman V Iyer

Abhishek Das

Yuvraj S Dhillon

Robert A Maddox

Rajat Agarwal

Howard S David

Sivakumar Radhakrishnan

Suneeta Sah

Stuart T Auvinen

Rami A Naqib

A physical layer (PHY) is coupled to a serial, differential link that is to include a number of lanes. The PHY includes a transmitter and a receiver to be coupled to each lane of the number of lanes. The transmitter coupled to each lane is configured to embed a clock with data to be transmitted over the lane, and the PHY periodically issues a blocking link state (BLS) request to cause an agent to enter a BLS to hold off link layer flit transmission for a duration. The PHY utilizes the serial, differential link during the duration for a PHY associated task selected from a group including an in-band reset, an entry into low power state, and an entry into partial width state.

High performance interconnect

A memory controller is described. The memory controller includes a register to collectively track row active commands sent to multiple memory chip banks of a memory rank. The memory controller includes a filter circuit to prevent an activate count value that is to be maintained in the register from being incremented in response to a row activate command that is sent to a different bank than a prior row activate command that caused the activate count value to be incremented

Memory controller that filters a count of row activate commands collectively sent to a set of memory banks

A DRAM memory having a storage cell array is described. The storage cell array has rows and columns. The storage cell array has reserved storage cells coupled to each of the rows. The reserved storage cells to store count values that individually count activations of each of the rows.

Per row activation count values embedded in storage cell array storage cells

A physical layer (PHY) is coupled to a serial, differential link that is to include a number of lanes. The PHY includes a transmitter and a receiver to be coupled to each lane of the number of lanes. The transmitter coupled to each lane is configured to embed a clock with data to be transmitted over the lane, and the PHY periodically issues a blocking link state (BLS) request to cause an agent to enter a BLS to hold off link layer flit transmission for a duration. The PHY utilizes the serial, differential link during the duration for a PHY associated task selected from a group including an in-band reset, an entry into low power state, and an entry into partial width state

Embodiments of the invention are generally directed to systems, methods, and apparatuses for the dynamic power control of a memory device thermal sensor. In some embodiments a memory device includes an on-die thermal sensor and enable logic to dynamically enable or disable the on-die thermal sensor. In some embodiments, the on-die thermal sensor senses thermal data responsive to a thermal data sense indication. The thermal data sense indication may be received subsequent to the expiration of a delay period.

Dynamic power control of a memory device thermal sensor

In some embodiments, a chip includes a scheduler, transmitters, receivers, and control circuitry. The schedule schedules signals to be transmitted outside the chip and the transmitters transmit the scheduled signals outside the chip. The receivers receive signals including signals with temperature information related to a temperature outside the chip. The control circuitry selectively limit a number of commands that can be scheduled within a series of smaller windows while checking the temperature information near the conclusion of a larger window comprising many smaller windows. Other embodiments are described.

Power management using adaptive thermal throttling

A flexible memory mapper for selectively inverting the state of an address line on an address bus includes a selectable inverter element and a control circuit. The selectable inverter element has a control input coupled to an output of the control circuit, an input, and an output. The control input, the input, and the output are capable of being in two logic levels. When the control input is in a first logic level, the input is passed through uninverted to the output of the selectable inverter element. When the control input is in a second logic level, the input is passed through inverted to the output of the selectable inverter element. The control circuit output feeds one of two logic levels to the control input of the selectable inverter element, outputting the second logic level in response to an input address within a selected address range and a user selectable input bit, and otherwise outputting the first logic level.

Configurable address line inverter for remapping memory

An address translator for use in a system having a central processing unit, a graphics controller for generating graphics addresses which index a graphics memory address map and for feeding data to a visual display, and a system memory converts a graphics address to a system address within the system memory. The invention initially partitions the system memory into a dedicated system memory for use by the graphics controller and a non-dedicated system memory for use by the central processing unit. The dedicated system memory corresponds to a base assigned memory within the graphics memory address map, and the non-dedicated system memory corresponds to a portion of the graphics memory address map excluding the base assigned memory. If the graphics address is within the base assigned memory, the graphics address is translated to a corresponding system address within the dedicated system memory. If the graphics address is within the portion of the graphics memory address map excluding the base assigned memory, the address translator converts the graphics address to a system address within the non-dedicated system memory, which designates a starting address of an available system memory block. Upon completion of the translation of the graphics address to the non-dedicated system memory, the boundary selector then selects a specific address within this allocated memory block corresponding to the graphics address.

Address translator for a shared memory computing system

A memory controller which can be used with an external tag RAM is disclosed. Existing index registers in the controller serve double duty as buffers for storing tag RAM data during a test mode. Input/output lines for the external tag RAM are coupled to the index registers in addition to being coupled to a comparator for comparison with an external address during normal operation. A buffer is provided so that data from the external address from the CPU can be written through these same tag RAM input/output lines in order to update the tag RAM after a miss. In order to prevent DRAMS from putting data on the memory bus during a cache RAM test, a CAS inhibit signal is provided to the DRAM state machine. Posted writes are also disabled to avoid interference with the address provided to the tag RAM.

Data cache management system with test mode using index registers and

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Livermore, CA, United States of America

William Harry Nale