Illumitex, Inc.

Teravicta Technologies, Inc.

William Gregory Flynn

Dung T Duong

Richard D Nelson

David A Goins

Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength.

Photon tunneling light emitting diodes and methods

A microelectromechanical system (MEMS) switch is provided which includes a multiple of three support arms extending from the periphery of a moveable electrode. In addition, MEMS switch includes a plurality of contact structures having portions extending into a space between a fixed electrode and the moveable electrode. In some cases, the relative arrangement of the support arms and the contact structures are congruent among three regions of the MEMS switch which collectively comprise the entirety of the fixed electrode and the entirety of the moveable electrode. In other embodiments, the contact structures may not be arranged congruently within the MEMS switch.

Growing community of inventors

Austin, TX, United States of America

William Gregory Flynn