Spansion Llc.

Advanced Micro Devices Corporation

William G Leonard

Richard Paul Kingsborough

Igor Sokolik

Suzette Keefe Pangrle

Nicholas H Tripsas

Minh Van Ngo

Fei Wang

Steven C Avanzino

Jeffrey Allan Shields

Juri Krieger

Zhida Lan

Stuart Spitzer

Xiaobo Shi

Nicolay F Yudanov

An organic memory cell containing an organic semiconductor layer containing a copolymer is disclosed. The copolymer contains a diarylacetylene portion and at least one of an arylacetylene portion and a heterocyclic acetylene portion. The copolymer may be a random copolymer, an alternating copolymer, a random block copolymer, or a block copolymer. Methods of making an organic memory devices/cells containing the copolymer, methods of using the organic memory devices/cells, and devices such as computers containing the organic memory devices/cells are also disclosed.

Memory cell containing copolymer containing diarylacetylene portion

A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.

System and method for processing an organic memory cell

The present memory device includes first and second electrodes, a passive layer between the first and second electrodes; and an active layer between the first and second electrodes, the active layer being of dendrimeric material which provides passages through the active layer.

Memory device with active layer of dendrimeric material

A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techniques and contains an organic semiconductor doped with a metal salt.

Spin on memory cell active layer doped with metal ions

Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.

Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structures

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Brookline, MA, United States of America

William G Leonard