Alliance for Sustainable Energy, LLC

Trustees of the Colorado School of Mines

William Edwin McMahon

Andrew Gordon Norman

Aaron Joseph Ptak

Emily Lowell Warren

Eric Steven Toberer

Celeste Louise Melamed

San Theingi

John Stanley Mangum

Described herein are systems and methods of utilizing nanochannels generated in the sacrificial layer of a semiconductor substrate to increase epitaxial lift-off speeds and facilitate reusability of GaAs substrates. The provided systems and methods may utilize unique nanochannel geometries to increase the surface area exposed to the etchant and further decrease etch times.

Patterned nanochannel sacrificial layer for semiconductor substrate reuse

Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D BiSe(0001) substrates in an MOCVD reactor.

Methods of exfoliating single crystal materials

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline InGaAlN alloy. The lattice parameter of the InGaAlN or other group III-nitride alloy may be related to the substrate lattice parameter by (a&#x2032;)=&#x221a;2(a) or (a&#x2032;)=(a)/&#x221a;2. The semiconductor alloy may be prepared to have a selected band gap.

Lattice matched crystalline substrates for cubic nitride semiconductor growth

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

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Denver, CO, United States of America

William Edwin McMahon