Bell Communications Research, Inc.

Vixel Corporation

At&t Bell Laboratories

Photonics Research Incorporated

William E Quinn

Jack L Jewell

Rajaram Bhat

Stanley E Swirhun

Robert P Bryan

Brian G Bagley

Robert E Nahory

Maria C Tamargo

Stan E Swirhun

Maria J Brasil

David E Aspnes

Charles R Kurkjian

Winston S Fu

Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within a mirror of a VCSEL, non-epitaxially formed on top of a VCSEL, non-epitaxially formed on side of a VCSEL, or formed on the substrate on the side opposite the VCSEL. A lateral injection vertical cavity surface emitting laser is also disclosed for integration with a lateral PIN photodiode. A photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the VCSEL. Similar devices using SLEDs are also disclosed.

Integration of laser with photodiode for feedback control

A solid-state scanner for reading bar codes or projecting images is described. The scanner operates either in a reading mode or a calibrate mode using the same hardware. Use of two-dimensional array light sources minimizes the size of the semiconductor chips containing the light source arrays is provided. Use of oversampling or anamorphic optical systems increase tolerances to angular misorientations is also discussed. Used in conjunction with a mechanical scanning device, the scanner is capable of reading two-dimensional bar codes or generating two-dimensional images.

Self calibrating solid state scanner

A package and method for packaging optoelectronic or electronic components is provided in which multiple chip regions are packaged simultaneously prior to sectioning of the wafer into chips. The method and package allows micro-optic and other package elements to be integrated onto wafers on the same face as the optoelectronic or electronic devices without inhibiting the ability to make electrical contact to the devices. The package elements may be integrated to the wafer by material deposition, by spinning, or by physical mounting.

Wafer scale optoelectronic package

A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

Semiconductor heterostructure having a capping layer preventing

A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

Capping layer preventing deleterious effects of As--P exchange

Alignment method and procedure for accurately determining the off-normal angle of incidence of an optical beam with a sample, for example, in ellipsometry. A diffraction grating is fabricated with a grating period chosen such that, when a laser beam irradiates the grating placed at the sample area, a beam is diffracted generally along the incoming laser beam. The laser is then angularly moved with respect to the grating until the two beams are auto-collimated, i.e., made coincident. The angle of incidence is then accurately determined from the laser wavelength and the grating period through well known equations.

Alignment of an ellipsometer or other optical instrument using a

A method and apparatus for controlling the growth of a multispecies film. During the film growth, an ellipsometer continuously monitors the surface on which the film is growing. The ellipsometer data is used to calculate the effective complex dielectric constant of the thin-film/substrate structure. A sequence of such data is used in a model calculation to determine the composition of the top portion of the thin film. The measured composition is compared with the target composition and the amount supplied of one of the species is correspondingly changed.

Ellipsometric control of material growth

A method for the preparation of silicate glasses of controlled index of refraction involves the thermal and/or plasma processing of organo-silicon polymers. Compositions so treated evidence a suppressed index of refraction which may subsequently be increased by sintering to yield a material uniquely suited for use in fiber optic devices.

Method for preparation of silicate glasses of controlled index of

A silica fiber coated with an organosilsesquioxane polymer guide light and evidences excellent mechanical integrity under adverse conditions of temperature and humidity. The polymer serves as a suitable coating and cladding for silica-based fibers designed for low fabrication cost fiber optic applications, as a replacement for plastic coatings on silica-based fibers, and as a water barrier for fiber applications in humid environments. The polymeric material described evidences characteristics which are superior for both polymeric coatings (acrylate) and claddings (linear siloxanes).

Growing community of inventors

Boulder, CO, United States of America

William E Quinn