D2s, Inc.

Other

Collett International, Inc.

William E Guthrie

Akira Fujimura

Harold Robert Zable

Ryan Pearman

Nagesh Shirali

Abhishek Shendre

Methods and systems for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area, based on an original set of exposure information. A pre-proximity effect correction (PEC) maximum dose for the local pattern density is determined, based on a pre-determined target post-PEC maximum dose. The pre-PEC maximum dose may be calculated near an edge of the desired shape. Methods also include modifying the original set of exposure information with the pre-PEC maximum dose to create a modified set of exposure information.

Method and system for determining a charged particle beam exposure for a local pattern density

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information including the dosages for the plurality of pixels in the area. An increase in dosage for at least one pixel in a plurality of pixels in the sub area is determined, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area.

Method and system of reducing charged particle beam write time

Methods for exposing a desired shape in an area on a surface using a charged particle beam system include determining a local pattern density for the area of the desired shape based on an original set of exposure information. A backscatter for a sub area is calculated, based on the original set of exposure information. Dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A pre-PEC maximum dose is determined for the local pattern density, based on a pre-determined target post-PEC maximum dose. The original set of exposure information is modified with the pre-PEC maximum dose and the increased dosage of the at least one pixel in the sub area to create a modified set of exposure information.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. The area comprises a plurality of pixels, and the original set of exposure information comprises dosages for the plurality of pixels in the area. A backscatter is calculated for a sub area of the area based on the original set of exposure information. A dosage for at least one pixel in a plurality of pixels in the sub area is increased, in a location where the backscatter of the sub area is below a pre-determined threshold, thereby increasing the backscatter of the sub area. A modified set of exposure information is output, including the increased dosage of the at least one pixel in the sub area.

A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.

A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes determining a local pattern density for the area of the pattern based on an original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PLC maximum dose.

A method for exposing a pattern in an area on a surface using a charged particle beam system is disclosed and includes inputting an original set of exposure information for the area and inputting a target post-proximity effect correction (PEC) maximum dose. A local pattern density is calculated for the area of the pattern based on the original set of exposure information. A pre-PEC maximum dose is determined for the area. The original set of exposure information is modified with the pre-PEC maximum dose.

In some embodiments, data is received defining a plurality of shot groups that will be delivered by a charged particle beam writer during an overall time period, where a first shot group will be delivered onto a first designated area at a first time period. A temperature of the first designated area at a different time period is determined. In some embodiments, the different time period is when secondary effects of exposure from a second shot group are received at the first designated area. In some embodiments, transient temperatures of a target designated area are determined at time periods when exposure from a shot group is received. An effective temperature of the target area is determined, using the transient temperatures and applying a compensation factor based on an amount of exposure received during that time period. A shot in the target shot group is modified based on the effective temperature.

Shaped beam lithography including temperature effects

A screen-type wind abatement system is provided for protecting openings, such as window and door openings, in buildings and other structures. Both openable and non-openable systems are disclosed. A openable system includes a first frame member anchored to the structure wall, a second frame member pivotally connected to the first frame member and having a screen mounting portion for receiving an edge of a screen and a retainer, and a snap-lock mechanism for removably connecting the first and second frame members, whereby the screen is sandwiched between the second frame and the retainer in covering relation with a window or door opening. The assembly is of heavy-duty construction to resist high impact forces caused by hurricane force winds and accompanying flying debris. The snap-lock mechanism allows for quick and simple installation and removal the second frame member. A fixed system is disclosed for non-openable installations.

Screen-type storm barrier and wind abatement system

A method is provided for quantifying circuit design complexity. Conclusions regarding the time and effort to implement a circuit design are thereby derived and historical and predictive analyses prepared. Common circuit design parameters are determined using a computer-implemented Normalization Method. In the Normalization Method, the effort required to implement circuitry is quantified by evaluating each one of a set of complexity factors. The total transistor count of a circuit is then adjusted according to these complexity factors to produce a &ldquo;normalized transistor&rdquo; count. Design characteristics or factors that influence complexity are identified from among raw data in a database of integrated circuit design project data. These factors are then incorporated into a Normalization Equation such that normalized transistor count is a statistically significant predictor of required design project effort. An identified design characteristic is expressed mathematically as either a composition term or a figure of merit term. A scaling process is used to derive a complexity factor reflecting different levels of relative design complexity within each composition term and the relative magnitude of impact for figure of merit terms. An empirical approach or estimation is used to determine levels of complexity and magnitudes of impact. A report can also be generated to estimate the amounts of time, effort, and personnel required to accomplish a proposed circuit design project.

Growing community of inventors

Santa Clara, CA, United States of America

William E Guthrie