Micron Technology Incorporated

William E Benson

Mehdi Asnaashari

Siamack Nemazie

Berhanu Iman

Michael George

Farshid Tabrizi

Ruchir Shah

A request is received to perform a multi-plane operation for first data of a first plane and second data of a second plane of a memory device. Responsive to the request, first trim values are retrieved from first trim registers and second trim values are retrieved from second trim registers, the first trim values loaded to the first registers based on a first voltage distribution observed at the first plane during a first time period and the second trim values loaded to the second registers based on a second voltage distribution observed at the second plane during a second time period. The multi-plane operation is performed using at least the first trim values for the first data at the first plane and at least the second trim values for the second data at the second plane.

Trim values for multi-plane operations

A request is received to perform a multi-plane operation for data residing on a first plane and a second plane of a memory device. A first set of trim values is obtained from a first set of registers of the memory device. The first set of trim values corresponds to a first voltage shift for the data at the first plane. A second set of trim values is obtained from a second set of registers of the memory device. The second set of trim values corresponds to a second voltage shift for the data at the second set of trim values for the data at the second plane. The multi-plane operation is performed using at least the first set of trim values for the data at the first plane and at least the second set of trim values for the data at the second plane.

The present disclosure includes methods and devices for solid state drive formatting. One device embodiment includes control circuitry coupled to a number of memory arrays, wherein each memory array has multiple physical blocks of memory cells. The memory arrays are formatted by the control circuitry that is configured to write system data to the number of memory arrays, where the system data ends at a physical block boundary; and write user data to the number of memory arrays, where the user data starts at a physical block boundary.

Solid state memory formatting

Methods for dynamic memory cache size adjustment, enabling dynamic memory cache size adjustment, memory devices, and memory systems are disclosed. One such method for dynamic memory cache size adjustment determines available memory space in a memory array and adjusts a size of a memory cache in the memory array responsive to the available memory space.

Dynamic memory cache size adjustment in a memory device

The present disclosure includes methods, devices, and systems for a logical address offset. One method embodiment includes detecting a memory unit formatting operation. Subsequently, in response to detecting the formatting operation, the method includes inspecting format information on the memory unit, calculating a logical address offset, and applying the offset to a host logical address.

Growing community of inventors

San Mateo, CA, United States of America

William E Benson