Koninklijke Philips Corporation N.v.

Lumileds Lighting U.s., LLC

Philips Lumileds Lighting Company LLC

Lumileds LLC

William David Collins, Iii

Walter Daschner

Franklin Joseph Wall

Robert Andrew Zona

Kathleen Anne Hartnett

Daniel Alexander Steigerwald

Jerome Chandra Bhat

Michael Ragan Krames

Godefridus Johannes Verhoeckx

Nicolaas Joseph Martin Van Leth

Julian A Carey

Gerard Harbers

Daniel Bernardo Roitman

Nathan Fredrick Gardner

Ban Poh Loh

Gary D Sasser

Prashant Singh

Yajun Wei

Arto V Nurmikko

Wayne L Snyder

Michael Laughner

Jason L Posselt

Sujan-Ehsan Wadud

Darren Dunphy

Devices and techniques are disclosed herein which include a first LED device layer, a second LED device layer, and an adhesive bondline disposed between the first LED device layer and the second LED device layer. The adhesive bondline includes a bondline thickness, a plurality of spacers disposed within the adhesive bondline, and a silicone matrix. The plurality of spacers may have a diameter or a shortest axis between 0.5 and 10 micrometers and the coefficient of variation is 10% or less. The plurality of spacers may be include SiO, alumina, soda lime glass, may be inorganic, or polymeric.

Precise bondline control between LED components

LED clamp

A transient voltage suppressor circuit is disclosed for a plurality (N) of LEDs connected in series. Only one zener diode is created for connection to each node between LEDs, and a pair of zener diodes (the 'end' zener diodes) are connected to the two pins (anode and cathode pads) of the series string. Therefore, only N+1 zener diodes are used. The end zener diodes (Qand Qn+1) effectively create back-to-back zener diodes across the two pins since the zener diodes share a common p+ substrate. The n+ regions of the end zener diodes Qand Qn+1 have the highest breakdown voltage requirement and must be placed relatively far apart. Adjacent n+ regions of the intermediate zener diodes have a much lower breakdown voltage requirement so may be located close together. The zener diodes may be placed within a very small footprint or can be larger for better suppressor performance.

Zener diode protection network in submount for LEDs connected in series

A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion of the ceramic substrate not forming the varistor may be aluminum oxide, aluminum nitride, silicon carbide, or boron nitride. The varistor portion may form any part of the ceramic substrate, including all of the ceramic substrate.

Ceramic substrate for light emitting diode where the substrate incorporates ESD protection

Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection

A semiconductor light emitting device is packaged by forming a sealed compartment enclosing the device, at least one of the walls of the sealed compartment being formed of an elastomeric material. The elastomeric material is then penetrated with a needle and a quantity of softer material is injected through the needle into the sealed compartment. In some embodiments, a coaxial needle or two needles are used, one needle to inject the softer material and one needle to vent air from the compartment.

Method of packaging a semiconductor light emitting device

One embodiment of the invention provides a backlight for an LCD display. The backlight uses a two-dimensional array of single color or white LEDs and a diffusing or phosphor coated cover plate. Various electrical connections of the LEDs and various phosphor color-conversion techniques are described.

LCD backlight using two-dimensional array LEDs

A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second conductivity type, both thinner than a layer of first conductivity type and a layer of second conductivity type surrounding the first active region. The tunnel junction permits vertical stacking of the active regions, which may increase the light generated by a device without increasing the size of the source.

Light emitting devices including tunnel junctions

A method of forming a photoresist mask on a light emitting device is disclosed. A portion of the light emitting device is coated with photoresist. A portion of the photoresist is exposed by light impinging on the interface of the light emitting device and the photoresist from inside the light emitting device. The photoresist is developed, removing either the exposed photoresist or the unexposed photoresist. In one embodiment, the photoresist mask may be used to form a phosphor coating. After the photoresist is developed to remove the exposed photoresist, a phosphor layer is deposited overlying the light emitting device. The unexposed portion of photoresist is stripped. In some embodiments, the light exposing the photoresist is produced by electrically biasing the light emitting device, or by shining light into the light emitting device through an aperture or by a focussed laser.

Producing self-aligned and self-exposed photoresist patterns on light emitting devices

A light source is disclosed that includes a light emitting device such as a III-nitride light emitting diode covered with a luminescent material structure, such as a single layer or multiple layers of phosphor. Any variations in the thickness of the luminescent material structure are less than or equal to 10% of the average thickness of the luminescent material structure. In some embodiments, the thickness of the luminescent material structure is less than 10% of a cross-sectional dimension of the light emitting device. In some embodiments, the luminescent material structure is the only luminescent material through which light emitted from the light emitting device passes. In some embodiments, the luminescent material structure is between about 15 and about 100 microns thick. The luminescent material structure is selectively deposited on the light emitting device by, for example, stenciling or electrophoretic deposition.

Phosphor-converted light emitting device

Growing community of inventors

San Jose, CA, United States of America

William David Collins, Iii