University of Arkansas

Other

William David Brown

Ajay Prabhakar Malshe

Hameed A Naseem

M Shahidul Haque

Leonard W Schaper

Min Zou

Li Cai

Muhammad A Khaliq

William C Russell

Sharad N Yedave

Wenping Jiang

Deepak G Bhat

Rajan A Beera

Arzu M Ozkan

Tarak A Railkar

John H Glezen

One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an Nenvironment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.

Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon

Compositions comprising nanoparticles, microparticles, and combinations thereof, the particles may be overcoated particles. Composite coatings and coated articles made therefrom, the coatings comprising mono or multi layers having a textured outer surface morphology, the layers may be continuous and/or discontinuous and may comprise different particle phases. Methods of making and using said compositions, coatings and coated articles.

Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles

The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superficial oxide layer.

Passivation of material using ultra-fast pulsed laser

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1&#xd7;10dopant atoms per cmof silicon.

Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1&times;10 dopant atoms per cm of silicon.

Methods for coating a substrate and methods of shaping a workpiece comprise formation and use, respectively, of a surface or substrate comprising a first phase selected from nitrides, carbides. carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, and a second phase selected from nitrides, carbides, carbonitrides, borides, sulphides, chalcogenides, oxides, and silicides, wherein said second phase comprises a multiplicity of discrete portions positioned into the first phase, with these multiplicity of portions comprising a continuous second phase, and made thereof, coating and articles, especially machining, cutting and shaping tools, wearparts, and methods of making and using the composition, coating and articles.

Methods of making and using cubic boron nitride composition, coating and articles made therefrom

Method and apparatus for seeding silicon substrates with diamond particles by electrostatic seeding. Method further includes either application of heat to form the particles into a layer, or chemical vapor deposition of diamond layer onto the particles. Disclosed products include silicon substrate having electrostatically affixed diamond particles, silicon substrate having particles at a density of at least 10 particles per cm , and silicon substrate having polycrystalline layer having nucleation density of at least 10 particles per cm .

Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom

A method of processing a substrate by first processing the substrate surface with a laser operating at a first wavelength to both evaporate a portion of the substrate and structurally weaken the substrate surface, and then by processing the substrate surface with a laser operating at a second wavelength to remove the structurally weakened surface.

Process for sequential multi beam laser processing of materials

Disclosed is an electroplating method and products made therefrom, which in one embodiment includes using a current density J.sub.O, to form a conductive metal layer having a surface roughness no greater than the surface roughness of the underlying member. In another embodiment of electroplating a substrate surface having peaks and valleys, the method includes electroplating a conductive metal onto the peaks to cover the peaks with the conductive metal, and into the valleys to substantially fill the valleys with the conductive metal.

Method of electroplating a substrate, and products made thereby

Disclosed are polished and planarized diamond films and a method and apparatus for polishing and planarizing diamond films. The method generally includes mechanical polishing of the diamond film against a ceramic surface in the presence of a treating agent of potassium nitrate and a polishing agent of potassium hydroxide. The produced films have an average surface roughness on the order of 0.05 microns, a planarization uniformity within eight percent, and are relatively free of process-induced contaminants.

Apparatus for and method of polishing and planarizing polycrystalline

Disclosed is a method of planarizing a diamond film which generally includes orifices in the surface. The method includes first polishing the diamond film surface to reduce the surface roughness. Next, a filler material is applied to the surface of the film to fill the orifices in the film. Finally, the film is polished to remove excess filler material and expose the diamond film surface. Also disclosed are planarized diamond films diamond substrate having a polished surface of both diamond and filler material and a variation in thickness of less than 8 percent.

Method of planarizing polycrystalline diamonds, planarized

A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.

Silicon nitride for application as the gate dielectric in MOS devices

A process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to about 30 seconds.

Growing community of inventors

Fayetteville, AR, United States of America

William David Brown