International Business Machines Corporation

Hoechst Celanese Corporation

Clariant Finance (bvi) Limited

William D Hinsberg, Iii

Robert David Allen

Gregory Michael Wallraff

Carlton G Willson

Logan L Simpson

Ralph R Dammel

Richard Vicari

Dennis R McKean

Frances Anne Houle

Robert J Twieg

Douglas J Gordon

Wayne Martin Moreau

David John Russell

Burton Jesse Carpenter

Scott Arthur MacDonald

William R Brunsvold

Donald Herman Glatzel

Richard Allen Day

John C Cheng

Kevin Michael Welsh

Wing Tsang Tang

Joseph LaTorre

Michael G McMaster

Lester A Pederson

Melvin W Montgomery

John R Mertz

Pamela E Jones

Webster E Howard

James S Wong

Robert T Lynch, Jr

Kathleen M Betterton

Huu T Nguyen

Robert J Tweig

Jr Conley

A polymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.

Copolymers 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene

A system and method for simulating a mechanistic kinetic process, such as a chemical process including one or more chemical reactions, over a predetermined time period is provided. The simulation proceeds stochastically, by taking discrete time steps through the time period, and performing events (i.e., chemical reactions), based on the relationship between their probabilities of occurrence and the time steps taken. The system and method of the invention include means or method steps for detecting equilibrium conditions, in which a reaction moves forward and backward with a reaction probability which is high, relative to the probabilities of other reactions being simulated. When a reaction in equilibrium is detected, a probability calculation is made, based on the non-equilibrium reactions being simulated. Time steps are made, and events are simulated, based only on the non-equilibrium reactions. Thus, processing time, which would otherwise be consumed simulating back-and-forth events in the equilibrium reaction, is saved.

Stochastic simulation method for processes containing equilibrium steps

The present invention comprises a simulator including at least one data storage apparatus and at least one processor. The simulator further has a material property data group, a system state data group comprising geometrical data for defining a plurality of geometrical subvolumes and system condition data for each subvolume of a simulated system, an event probability data group including a plurality of event subgroups for uniquely identifying a set of events, event probabilities being associated with at least one of the geometrical subvolumes, and an event process data group including the time dependent process functions for all events which can occur in the system. These data groups and at least one functional-relationship link for correlating all of them are stored in the data storage apparatus. Thus, the material energy system can be represented by such data groups without requiring an explicit multiple dimension data structure. The processor performs a simulating process comprising the steps of: (a) computing the probability of occurrence for each of the events and determining a time step by using a total probability of occurrence for each of the events; (b) randomly selecting a simulated event for the time step and updating the system condition data group representing the system state; and (c) repeating the steps (a) and (b) until a predefined simulation end time is reached.

Spatially resolved stochastic simulation system

An optical data storage device having a substrate has guide ridges, or reverse grooves, in a concentric or spiral shape formed thereon, and disposed in a plane parallel to and disposed from the substrate surface. The device further has pits formed approximately midway between the guide ridges and disposed in the substrate and having bottoms below the plane of the substrate surface. A method for manufacturing the optical data storage device having both address pits and guide ridges is disclosed. A dual tone photosensitive material is applied to a substrate, exposed with a laser light source comprising two distinct wavelengths, and developed to provide a desired bipolar geometry thereon.

Patterning process for bipolar optical storage medium

The present invention relates to a radiation-sensitive resist composition and the process for its use in the manufacture of integrated circuits. The composition comprises a radiation-sensitive acid generator, a binder soluble in aqueous base and an acrylate copolymer having acid labile pendant groups.

Radiation-sensitive resist composition and process for its use

A copolymer of (a) an unsubstituted 4-hydroxystyrene monomer and (b) a substituted 4-hydroxystyrene monomer of the formula ##STR1## wherein A, B, C, and D are independently H or C.sub.1 to C.sub.4 alkyl and wherein at least one of B and D is C.sub.1 to C.sub.4 alkyl; and wherein said copolymer has a molecular weight of from about 800 to about 100,000; and wherein the mol ratio of monomer (a) to monomer (b) ranges from about 3:1 to about 1:3.

Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in

Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.

Positive photoresist system for near-UV to visible imaging

An improved photoimagable cationically polymerizable epoxy based coating material is provided, that is suitable for use on a variety of substrates. The material includes an epoxy resin system consisting essentially of between about 10% and about 80% by weight of a polyol resin which preferably is a condensation product of epichlorohydrin and bisphenol A having a molecular weight of between about 40,000 and 130,000; and between about 35% and 72% by weight of an epoxidized glycidyl ether of a brominated bisphenol A having a softening point of between about 60.degree. C. and about 110.degree. C. and a molecular weight of between about 600 and 2,500. A third resin, either an epoxy cresol novolak or a polyepoxy resin, is also added to the resin system. To this resin system is added about 0.1 to about 15 parts by weight per 100 parts of resin of a cationic photoinitiator capable of initiating polymerization of said epoxidized resin system upon exposure to actinic radiation; the system being further characterized by having an absorbance of light in the 330 to 700 nm region of less than 0.1 for a 2.0 mil thick film. Optionally a photosensitizer such as perylene and its derivatives or anthracene and its derivatives may be added.

Composition for photo imaging

A new polymer family is shown for use in high sensitivity, high resolution photoresists. A liquid apply resist includes a polymer binder of t-butyl methacrylate/methylmethacrylate/methacrylic acid and an initiator which generates acid upon exposure to radiation.

Liquid apply, aqueous processable photoresist compositions

Disclosed are compounds of the general formula:

Ferroelectric liquid crystals

A composition including an initiator which generates acid upon exposure to radiation in the presence of a sensitizer. The composition may be mixed with an acid sensitive polymer or prepolymer to make a visible light or laser imageable photoresist. The sensitizer has phenylethynyl and methoxy substituents which, when properly positioned, allow it to utilize all of the visible argon ion laser lines.

Photoacid generating composition and sensitizer therefor

A new polymer family is shown for use in high speed photoresists. A dry film photoresist includes a polymer binder prepared from t-butyl methacrylate/methylmethacrylate/acrylic acid/ethyl acrylate and a suitable initiator.

Dry film, aqueous processable photoresist compositions

A process for making a self-aligned thin film transistor, said process comprising the steps of: (1) providing a gate which comprises a glass substrate, a transparent electrode on top thereof, and a metal electrode on top of said transparent electrode, (2) forming a stack by depositing over said gate a triple layer structure consisting of gate dielectric material, active material and a top passivating dielectric, (3) coating the top of said triple layer with a dual-tone photoresist, (4) exposing said photoresist from the top through a mask having transparent areas, opaque areas and areas transparent to selective wavelengths, using broad band UV light, (5) developing the photoresist by treatment with a solvent, (6) etching the stack with a liquid etchant through to the glass substrate, (7) exposing the photoresist from the bottom through the glass substrate using near UV light, (8) developing the photoresist with a solvent, and (9) etching off the top passivating layer of the stack.

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Fremont, CA, United States of America

William D Hinsberg, Iii