Triquint Technology Holding Co.

Lucent Technologies Inc.

Other

Agere Systems Inc.

Agere Systems Guardian Corp.

William Crossley Dautremont-Smith

Sun-Yuan Huang

Si Hyung Cho

Kenneth L Bacher

Charles H Joyner

Thomas Andrew Strasser

David Alan Ackerman

Andrew John Stentz

Abdallah Ougazzaden

Liming Zhang

Karsten Rottwitt

Ronald Eugene Leibenguth

Claude Lewis Reynolds, Jr

Mei Du

Todd Robert Hayes

The invention is a semiconductor optical device and method of fabrication where the device includes an active region with an active layer having a first index of refraction, and a blocking region having a second, lower index of refraction. A semiconductor layer having an index of refraction higher than the blocking region is formed over both the active and blocking regions so that the semiconductor layer is in closer proximity to the active layer in areas not covered by the blocking region so as to decrease the difference between the effective index of refraction in the active region and the effective refractive index of the blocking region. Such devices are particularly useful for pumping optical amplifiers since greater power can be achieved while maintaining single mode emission.

Method of manufacturing semiconductor optical devices

The present invention is directed to a large area single-mode (LASM) laser system that provides a laser having a wider gain region and thus a higher power output without introducing the second transverse mode into the optical signal. The laser system of the present invention also reduces the laser junction temperature, thereby improving the reliability of the laser and of laser systems constructed therefrom. The present invention also provides a stabilized spectrum in an optical signal by providing a means for feeding back from an external fiber grating to the laser only a single mode and a selective spectrum of an optical signal generated by the laser.

High-power and high efficiency large area single-mode laser

A broadband partial reflector is located downstream from an optical combiner device. The partial reflector reflects a portion of the combined light back through the combiner device and back into the respective optical pump sources. There are no fiber gratings or other filters between the sources and the combiner device. Consequently, the sources are locked and/or stabilized according to the acceptance bandpass characteristics of the input ports of the combiner device. Since no gratings or other filters need to be located between the sources and the combiner device, the problem of insertion power loss due to spectral mismatch at the input ports can be avoided. In other words, self-aligned wavelength feedback stabilization is accomplished by reflecting a portion of the combined light signal back through the input ports of the combiner device.

Optical combiner system and method

The invention is an optical apparatus and method of fabrication wherein an optical device such as a semiconductor laser includes a grating and a waveguide optically coupled to the grating. At least a portion of the waveguide coupled to the grating has a width which varies along the length of the waveguide in such a manner as to broaden the spectral line width of light output from the device. The width can be varied according to linear, sinusoidal or saw-tooth functions. A broadened line width permits pumping of a Raman amplifier at a high power without inducing any significant Brillouin Scattering.

Optical device with increased spectral width

A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.

High power single mode laser and method of fabrication

A fiber Raman amplifier is configured to use a co-propagating Raman pump source, which may be beneficial in a variety of system configurations (for example, in bidirectional communication systems). By carefully configuring the pump source characteristics, sufficient optical gain can be achieved in the co-propagating arrangement, the characteristics including: (1) using an optical pump power of at least 50 mW, (2) having a relatively large spectral bandwidth within the pump (to suppress SBS); and (3) a frequency difference between all longitudinal pump modes of each pump laser being separated by at least the walk-off frequency between the pump laser frequency and the signal frequency, and all intense longitudinal modes between different pump lasers being separated by at least the electrical bandwidth of the communication system.

Optical communication system with co-propagating pump radiation for raman amplification

A distributed feedback (DFB) laser is made with a spatially graded optical coupling (.kappa.) between its diffraction grating and its active layer by means of selective area epitaxial growth of the epitaxial layer from which the grating is formed. More specifically, the epitaxial layer is formed on a major surface of a semiconductor substrate on which a mask, such as a silicon dioxide mask, has been formed. The mask has a pair of segments spaced apart by a fixed distance, the segments having spatially variable widths. Advantageously the epitaxial layer has a refractive index that is different from that of the substrate at the operating wavelength of the laser. The epitaxial layer is then etched into stripes. In this way the heights of the resulting grating stripes will be spatially variable, and so will the coupling .kappa. between the grating and the active layer. In this way, the properties of the optical output of the laswer can be adjusted. Advantageously also, the spacer layer and the substrate have the same refractive indices at the operating wavelength of the laser, whereby accurate control over the depth of the etching is not required.

Growing community of inventors

Orefield, PA, United States of America

William Crossley Dautremont-Smith