Polyera Corporation

Northwestern University

Flexterra, Inc.

Polyera Corporatoin

William Christopher Sheets

Antonio Facchetti

Tobin Jay Marks

Yu Xia

Mercouri G Kanatzidis

He Yan

Myung-Gil Kim

Jingqi Wang

Chung-Chin Hsiao

Shaofeng Lu

Hakan Usta

Chun Huang

Mitchell Denti

Daniel Batzel

Xinge Yu

Minhuei Wang

Tobin J Marks

Jing Chen

Don Frye

Wei Huang

The present teachings relate to charge-transporting metal oxide-polymer blend thin films which can be incorporated as the semiconductor component or one of the conductor components of a thin film transistor. Generally, the present charge-transporting metal oxide-polymer blend thin film includes a semiconducting or conducting metal oxide lattice and an electrically insulating polymer dispersed within the lattice. The electrically insulating polymer is present at about 20% or less by weight of the metal oxide.

Charge-transporting metal oxide-polymer blend thin films

Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (&#x3c;400&#xb0; C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Low-temperature fabrication of nanomaterial-derived metal composite thin films

Disclosed are new compounds having semiconducting properties. Such compounds can be processed in solution-phase into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.

Semiconducting compounds and optoelectronic devices incorporating same

The present teachings provide a coating composition (a passivation formulation) for preparing a coating material in a metal oxide thin film transistor, where the coating material comprises a polymer blend including a polymer and a stabilizing agent. Incorporation of a stabilizing agent according to the present teachings in the coating material can lead to improved device performance of the metal oxide thin film transistor, in particular, reduced shift in the threshold voltage and long-term bias-stress stability.

Coating materials for oxide thin film transistors

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

Polymeric materials for use in metal-oxide-semiconductor field-effect transistors

Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (&#x3c;400&#xb0; C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Low-temperature fabrication of metal oxide thin films and nanomaterial-derived metal composite thin films

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Chicago, IL, United States of America

William Christopher Sheets