Euv Llc.

Kla Tencor Corporation

William C Replogle

Leonard Elliott Klebanoff

Steven Julian Haney

Donald Joe Herron

William C Sweatt

Rajeev Patil

Yevgeniy Churin

Luis J Bernardez

David Ramirez

Terry A Johnson

Disclosed are methods and apparatus for hermetically sealing a nonlinear optical (NLO) crystal for use in a laser system. A mounted NLO crystal, an enclosure base, a lid, and a plurality of window components are moved into an oven. A vacuum bake process is then performed on the mounted NLO crystal, enclosure base, lid, and plurality of window components until a humidity level that is less than a predefined amount is reached. The mounted NLO crystal, enclosure base, lid, and plurality of window components are moved from the oven onto a stage of a glove box that includes a sealing tool. In the glove box, the mounted NLO crystal is hermetically sealed into the enclosure base by sealing the lid and plurality of window components into openings of the enclosure base.

Hermetic sealing of a nonlinear crystal for use in a laser system

An in-vacuum radiation exposure shutter device can be employed to regulate a large footprint light beam. The shutter device includes (a) a source of radiation that generates an energy beam; (2) a shutter that includes (i) a frame defining an aperture toward which the energy beam is directed and (ii) a plurality of blades that are secured to the frame; and (3) device that rotates the shutter to cause the plurality of blades to intercept or allow the energy beam to travel through the aperture. Each blade can have a substantially planar surface and the plurality of blades are secured to the frame such that the planar surfaces of the plurality of blades are substantially parallel to each other. The shutter device is particularly suited for operation in a vacuum environment and can achieve shuttering speeds from about 0.1 second to 0.001 second or faster.

In-vacuum exposure shutter

Control of particle contamination on the reticle and carbon contamination of optical surfaces in photolithography systems can be achieved by the establishment of multiple pressure zones in the photolithography systems. The different zones will enclose the reticle, projection optics, wafer, and other components of system. The system includes a vacuum apparatus that includes: a housing defining a vacuum chamber; one or more metrology trays situated within the vacuum chamber each of which is supported by at least one support member, wherein the tray separates the vacuum chamber into a various compartments that are maintained at different pressures; and conductance seal devices for adjoining the perimeter of each tray to an inner surface of the housing wherein the tray is decoupled from vibrations emanating from the inner surface of the housing.

Extreme-UV lithography vacuum chamber zone seal

A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer. The adjusting means can, for example, change at least one of: (i) partial coherence of the photolithography system, (ii) mask image illumination uniformity on the wafer or (iii) centroid position of the illumination flux in the entrance pupil. A particularly preferred adjusting means includes at least one vignetting mask that covers at least a portion of the at least two substantially equal radial segments of the parent aspheric mirror.

Extreme-UV lithography system

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Livermore, CA, United States of America

William C Replogle