Ideal Power Inc.

American Colloid Company

Ideal Power Converters, Inc.

Other

Bae Systems Information and Electronic Systems Integration Inc.

Solar Refining, Inc.

Bae Systems Information and Electronic Systems Inc.

American Colloid

William C Alexander

Richard A Blanchard

Paul A Bundschuh

Mark Anderson

Barbara R Regan

Guy Michael Barron

Christopher Cobb

Mark Bertane

Paul Roush

David S Breed

David J Schorr

John W Merritt

Maynard Teppo

Daniel M Gilbert

Alfonso Cuevas

Ira E Odom

The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on BOTH sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the 'B-TRAN' type. In one advantageous group of embodiments (but not all), the breakdown initiation regions are defined by dopant introduction through the bottom of trench portions which lie within the emitter/collector region. In one group of embodiments (but not all), these can advantageously be separated trench portions which are not continuous with the trench(es) surrounding the emitter/collector region(s).

Ruggedized symmetrically bidirectional bipolar power transistor

Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations.

Systems and methods for bidirectional device fabrication

Methods and systems for operating a stable platform in a far-offshore deep-sea environment. The platform can advantageously be a wind power generation station. A structural framework carries (for example) the wind turbine in an elevated position. Multiple points on the floating structure are connected both to a surface float and to a deep mass (e.g. an enclosed volume of seawater).

Ocean wind systems, subsystems, and methods with stabilization by assemblies of deep-water-masses with articulating floats

Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.

Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems

The present application discloses new approaches to providing 'passive-off' protection for a B-TRAN-like device. Even if the control circuitry is inactive, AC coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. Preferably the same switches which implement diode-mode and pre-turnoff operation are used as part of the passive-off circuit operation.

Double-base-connected bipolar transistors with passive components preventing accidental turn-on

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Operation of double-base bipolar transistors with additional timing phases at switching transitions

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (B-TRANs) for switching. Four-terminal three-layer B-TRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. B-TRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. B-TRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

Methods of operating a double-base-contact bidirectional bipolar junction transistor

Methods and systems for smart transfer switch circuits and operation, and for operation of transfer and/or cutoff switches in combination with a power-packet-switching-architecture (PPSA) power converter. The transistors of the transfer and cutoff switches, and the transistors of the phase legs of the PPSA power converter if present, preferably all use double-base bipolar transistors which have low on-state series resistance as the switching elements.

Smart transfer switch devices, systems, and methods using double-base bipolar transistors

Methods and systems for transforming electric power between two or more portals. Any or all portals can be DC, single phase AC, or multi-phase AC. Conversion is accomplished by a plurality of bi-directional conducting and blocking semiconductor switches which alternately connect an inductor and parallel capacitor between said portals, such that energy is transferred into the inductor from one or more input portals and/or phases, then the energy is transferred out of the inductor to one or more output portals and/or phases, with said parallel capacitor facilitating 'soft' turn-off, and with any excess inductor energy being returned back to the input. Soft turn-on and reverse recovery is also facilitated. Said bi-directional switches allow for two power transfers per inductor/capacitor cycle, thereby maximizing inductor/capacitor utilization as well as providing for optimum converter operation with high input/output voltage ratios. Control means coordinate the switches to accomplish the desired power transfers.

Growing community of inventors

Spicewood, TX, United States of America

William C Alexander