Intel Corporation

William Brezinski

Richard F Vreeland

Nafees Kabir

Colin T Carver

Ramanan Chebiam

Jeffery D Bielefeld

Brennen Karl Mueller

Manish Chandhok

Michael Christenson

Mauro J Kobrinsky

Carl H Naylor

An integrated circuit interconnect structure includes a first interconnect in a first metallization level and a first dielectric adjacent to at least a portion of the first interconnect, where the first dielectric having a first carbon content. The integrated circuit interconnect structure further includes a second interconnect in a second metallization level above the first metallization level. The second interconnect includes a lowermost surface in contact with at least a portion of an uppermost surface of the first interconnect. A second dielectric having a second carbon content is adjacent to at least a portion of the second interconnect and the first dielectric. The first carbon concentration increases with distance away from the lowermost surface of the second interconnect and the second carbon concentration increases with distance away from the uppermost surface of the first interconnect.

Interconnect structures and methods of fabrication

Composite integrated circuit (IC) device structures that include two components coupled through hybrid bonded interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over a substantially planar dielectric and metallization layer. A surface of a metallization feature may be augmented with supplemental metal, for example to at least partially backfill a recess in a surface of the metallization feature as left by a planarization process. In some exemplary embodiments, supplemental metal is deposited selectively onto a metallization feature through an autocatalytic (electroless) metal deposition process. A surface of a dielectric material surrounding a metallization feature may also be recessed, for example to at least partially neutralize a recess in an adjacent metallization feature, for example resulting from a planarization process.

Methods and structures for improved electrical contact between bonded integrated circuit interfaces

Composite integrated circuit (IC) device structures that include two components coupled through a hybrid bonded composite interconnect structure. The two components may be two different monolithic IC structures (e.g., chips) that are bonded over substantially planar dielectric and metallization interfaces. Composite interconnect metallization features formed at a bond interface may be doped with a metal or chalcogenide dopant. The dopant may migrate to a periphery of the composite interconnect structure and form a barrier material that will then limit outdiffusion of a metal, such as copper, into adjacent dielectric material.

Metallization barrier structures for bonded integrated circuit interfaces

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Beaverton, OR, United States of America

William Brezinski