Honeywell International Inc.

Visa International Service Association

Sri International

William B Bedwell

Nancy E Iwamoto

Kenneth M Sippola

Sonia Reed

Mustafa Cemal Top

William Alexander Thaw

Steven Crouch-Baker

Francis Tanzella

Esperanza Alvarez

John Stephens Stotts

Lorenza Moro

Nigel P Hacker

Bo Li

Kreisler S Lau

Roger Leung

Boris Korolev

Paul G Apen

Songyuan Xie

Shyama P Mukherjee

Ananth Naman

Jan Nedbal

Pablo E Garcia

Joseph T Kennedy

Tadashi Nakano

Teresa Baldwin

Mustafa Top

Sarah Young

Jason T Stuck

Sanjeev Dutta

Karen Frances Shakespear

Janus A J Haagensen

Eric A Arons

Osita Onugha

Arlene Suedemeyer

Mello Hebert

William Thaw

Francis Louis Tanzella

Embodiments of the invention relate to payment cards and methods for making payment cards. In one embodiment, a card comprises a first layer and a second layer adjacent to the first layer. The second layer comprises a plurality of particles comprising metal, and the plurality of particles comprise at least about 15 volume % of the second layer. In another embodiment, a mixture is prepared comprising polymer and a plurality of particles comprising metal. The plurality of particles comprise at least about 15 volume % of the mixture. The mixture is pressed and an outer layer is applied. The mixture and outer layer are then cut to form the card.

Payment card system and method

An implantable catheter is provided that may be disinfected without removal from the body of a patient, using a photocatalytic method to activate a reaction on the catheter surface that generates oxidizing agents in the form of Reactive Oxygen Species ('ROS') and thus destroy microorganisms in a biofilm that is present or forming. A catheter system includes the implantable catheter, a light source, and a source of power operably connected to the light source. Methods are also provided for disinfecting the implantable catheter in vivo.

Photocatalytic disinfection of implanted catheters

Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Anti-reflective coating for photolithography and methods of preparation thereof

The present invention provides a composition comprising: The present compositions may be used as a dielectric substrate material, etch stop, hardmask, or air bridge in microchips, multichip modules, laminated circuit boards, or printed wiring boards. The present composition may also be used as a passive coating for enveloping a completed wafer.

Organic compositions

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula I: [YSiO][ZSiO][HSiO]where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula I; b is from 2 percent to 50 percent of Formula I; and c is from 20 percent to 80 percent of Formula I. The present composition is useful in semiconductor devices and may be advantageously used as an etch stop.

Organosiloxanes

The present invention provides a composition comprising:

The present invention provides an organosiloxane comprising at least 80 weight percent of Formula 1: [YSiO]{ZSiO][HSiO](where Y is aryl; Z is alkenyl; a is from 15 percent to 70 percent of Formula 1; b is from 2 percent to 50 percent of Formula 1; and c is from 20 percent to 80 percent of Formula 1. The present organosiloxane may be used as ceramic binder, high temperature encapsulant, and fiber matrix binder. The present composition is also useful as an adhesion promoter in that it exhibits good adhesive properties when coupled with other materials in non-microelectronic or microelectronic applications. Preferably, the present compositions are used in microelectronic applications as etch stops, hardmasks, and dielectrics.

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Palo Alto, CA, United States of America

William B Bedwell