Analog Devices,inc.

Analog Devices Global

Analog Devices International Unlimited Company

Analog Devices Global Unlimited Company

William Allan Lane

Patrick Martin McGuinness

Edward John Coyne

Bernard Patrick Stenson

Andrew David Bain

Paul Malachy Daly

Derek F Bowers

Helen Berney

Michael Thomas Dunbar

Anne Maria Deignan

Eamon Hynes

Donal McAuliffe

Baoxing Chen

Seamus Paul Whiston

Paul Martin Lambkin

David J Clarke

Alfonso Berduque

Raymond J Speer

Brendan Cawley

Christina B McLoughlin

Jane Cornett

Christophe Antoine

Michael C Coln

Stephen O'Brien

Shane Patrick Geary

Matthew Thomas Canty

Breandán Pol Og Ó hAnnaidh

Patrick Martin McGuiness

Daniel Joseph Lucey

Himanshu Jain

Colin Gerard Lyden

Michael C W Coln

Thomas G O'Dwyer

Laurence Brendan O'Sullivan

Brian Anthony Moane

Stephen Denis Heffernan

John Twomey

Ramji Lakshmanan

Nicola M O'Byrne

Roman Trogan

Shane Geary

John R Reidy

Mark Daniel De Leon Alea

Brian Sweeney

Marc T Dunham

Sinead Maire Mcdermott

Donai P McAuliffe

Mark De Leon Alea

Sinead Maire McDermott

Leo P McHugh

Tom D Moore

Mike A O'Neill

Jagar Singh

Patrick Mcguinness

Christina Mcloughlin

Patrick Martin Mcguinness

Derek Frederick Bowers

Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.

Designs and fabrication of nanogap sensors

An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.

Electrochemical sensor, and a method of forming an electrochemical sensor

A microfabricated thermal platform can be formed over a substrate, such as a silicon wafer, that may form part of the platform. The substrate is coated in a thermally-insulating material, which may be an organic polymer such, as polyimide or SUS. The surface of the thermally-insulating material may include an arrangement of one or more thermal sites, with each site having a reaction plate (or thermal plate) over which chemical reactions may occur. A heating element may be positioned beneath each reaction plate. A fluidic medium, such as a liquid or a gas, may be disposed over the thermal sites. One application is in chemical and biological reactions. In such reactions, the fluidic medium may be an aqueous solution which comprises reagents for those reactions. The fluidic medium may be an ionically conducting fluid, organic solution or a gas. Precise temperature control enables the correct reactions.

Thermal platform and a method of fabricating a thermal platform

A monolithic vapor chamber heat dissipating device uses a phase change liquid and one or more wicks to dissipate heat from a heat-generating system. The phase change liquid and one or more wicks may be directly coupled to the heat-generating system, or may be coupled to an intermediate evaporator substrate. The phase change liquid vaporizes as it absorbs heat from the heat-generating system. When the vapor rises and encounters a condenser substrate, the vapor condenses and transfers the heat to the condenser substrate. The condensed vapor is drawn by gravity and the one or more wicks to the phase change liquid coupled to the heat-generating system.

Monolithic phase change heat sink

A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.

Bipolar transistor

An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.

Integrated ion sensing apparatus and methods

An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer that are connected in series while alternating between the p-type and the n-type thermoelectric elements. The integrated circuit may include first and second substrates each having formed thereon a plurality of thermoelectric legs of a respective type of thermoelectric material. The first and second thermoelectric substrates also may have respective conductors, each coupled to a base of an associated thermoelectric leg and forming a mounting pad for coupling to a thermoelectric leg of the counterpart substrate. In other embodiments, one or more substrates may have trenches formed therein to capture eutectic material that facilitates bonds between components from each of the substrates and prevent inadvertent short circuits that may occur between components of the circuit system.

Wafer scale thermoelectric energy harvester having interleaved, opposing thermoelectric legs and manufacturing techniques therefor

A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.

Combined isolator and power switch

An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.

Electrostatic protection device

Wafer scale thermoelectric energy harvester having trenches for capture of eutectic material

An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.

Wafer scale thermoelectric energy harvester

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Waterfall, Ireland

William Allan Lane