Advanced Technology Materials, Inc.

Fujifilm Electronic Materials U.s.a., Inc.

Fujifilm Corporation

Sachem, Inc.

Advanced Technologies Materials, Inc.

William A Wojtczak

Long Van Nguyen

Tomonori Takahashi

Bing Du

David Daniel Bernhard

Thomas Dory

Ma Fatima Seijo

Atsushi Mizutani

Emil A Kneer

Thomas H Baum

George Guan

Cary Regulski

Kazutaka Takahashi

Keeyoung Park

Stephen A Fine

Yasuo Sugishima

Tetsuya Kamimura

Tadashi Inaba

Ying Ma

Deepak Verma

Sian Collins

Raj Sakamuri

David W Minsek

Thomas J Kloffenstein

Daniel N Fine

Stephen A Fine, Legal Representative

Dean Dewulf

Dave Bernhard

Ma Fatimo Seijo

Fatima Ma Seijo

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

Cleaning formulation for removing residues on surfaces

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.

Surface treatment compositions and methods

This disclosure relates to etching compositions containing 1) at least one oxidizing agent; 2) at least one chelating agent; 3) at least one organic solvent; 4) at least one amine compound; and 5) water.

Etching composition

This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.

Methods of using surface treatment compositions

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Stripping compositions for removing photoresists from semiconductor substrates

Surface treatment compositions and articles containing same

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 5) at least one quaternary ammonium hydroxide; and 6) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

The disclosure provides methods and compositions therefor for treating a surface wherein a surface treatment layer is formed on the surface, thereby minimizing or preventing pattern collapse as the surface is subjected to typical cleaning steps in the semiconductor manufacturing process.

Surface treatment methods and compositions therefor

This disclosure relates to a cleaning composition that contains 1) hydroxylamine in an amount of from about 0.5% to about 20% by weight of the composition; 2) a pH adjusting agent, the pH adjusting agent being a base free of a metal ion and in an amount of at most about 3% by weight of the composition; 3) an alkylene glycol; and 4) water; in which the pH of the composition is from about 7 to about 11. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one carboxylic acid; 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 7) water. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Growing community of inventors

Austin, TX, United States of America

William A Wojtczak