Advanced Micro Devices Corporation

William A Whigham

Derick J Wristers

Jon D Cheek

Michael B Allen

Allan T Nelson

Mark E Culp

Richard A Anundson

A multi-port gas injector for a vertical furnace that is utilized for low-pressure chemical vapor deposition of silicon dioxide using a tetraethyl orthosilicate (&ldquo;TEOS&rdquo;) source is provided. The multi-port gas injector has two or three ports for introducing TEOS into the vertical furnace. The gas injector includes a first and second section of tubing, preferably made of quartz, joined such that they are preferably substantially perpendicular. One end of the second section forms one of the ports. In one embodiment a hole located at the position where the first and second sections are joined forms a second port. In other embodiments, a third and, possibly, a fourth section of tubing are joined to the second section of tubing to form a second and, possibly, a third port. Additionally, the second section of tubing may have one or more tapers to reduce the diameter of the hole through which gas exits.

Multi-port gas injector for a vertical furnace used in semiconductor processing

A method and apparatus for reducing byproduct induced defects in a processing tool is provided. A purge gas is introduced into a vessel of the processing tool. The vessel is heated to a temperature above a vaporization temperature of the byproduct. The temperature is maintained for a predetermined period of time. The vessel is purged to remove at least a portion of the byproduct.

Method and apparatus for controlling byproduct induced defect density

A method for slowing the diffusion of boron ions in a CMOS structure includes a preanneal step which can be incorporated as part of a step in which silane is deposited across the surface of the wafer. After the last implant on a CMOS device, silane (SiH.sub.4) is deposited over the surface of the wafer using a chemical vapor deposition (CVD) tool. The deposition of silane is done at 400.degree. C. The temperature is raised in the CVD tool to a temperature in the range of 550.degree. C. to 650.degree. C. and held for 30-60 minutes. This temperature does not affect the thin film of silicon which is formed from the silane, yet provides the necessary thermal cycle to 'repair' the crucial first 200 .ANG. to 600 .ANG. of the silicon surface. Normal processing steps, including a rapid thermal anneal for 30 seconds at 1025.degree. C. follow. The RTA is necessary to activate the dopants (arsenic and boron) in the source and drain of the respective devices. The boron dopant species diffuses less during subsequent rapid thermal anneal cycles since the crucial first 200 .ANG. to 600 .ANG. of the silicon surface have been repaired using this preanneal step.

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Austin, TX, United States of America

William A Whigham