International Business Machines Corporation

Hitachi Global Storage Netherlands, B.v.

Advanced Micro Devices Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Other

Tokyo Electron Limited

Dow Global Technolgoies LLC

Willi Volksen

Robert Dennis Miller

James L Hedrick

Teddie Peregrino Magbitang

Craig Jon Hawker

Geraud Jean-Michel Dubois

Ho-Cheol Kim

Victor Yee-Way Lee

Geraud J Dubois

Sampath Purushothaman

Do Yeung Yoon

Theo J Frot

Jennifer Nam Cha

Dennis R McKean

Elbert Emin Huang

Kenneth Raymond Carter

Krystelle Lionti

Michael William Chaw

Dan Dawson

Muthumanickam Sankarapandian

Robert L Bruce

Phillip Joe Brock

Victor Y Lee

Richard I Palmisano

Moonhor Ree

Roy Rongqing Yu

Deborah A Neumayer

Linda Karin Sundberg

Sally Ann Swanson

Donald Clifford Hofer

Jeffrey W Labadie

Wesley LeRoy Hillman

Mary Elizabeth Rothwell

Daniel C Edelstein

Alfred Grill

Bruno Michel

Griselda Bonilla

Terry Allen Spooner

Hiroyuki Miyazoe

John Christopher Arnold

Gregory Michael Wallraff

Howard Gordon Zolla

Eric F Connor

William J Cote

Richard Anthony DiPietro

Patrick Ruch

Gregory M Fritz

Eric Gerhard Liniger

Satya Venkata Nitta

Alfred Floyd Renaldo

James Economy

Robert F Cook

E Todd Ryan

George Czornyj

James Lupton Hedrick

Martha Inez Sanchez

Dominic Changwon Yang

Sarmenio Saliba

David Mecerreyes

Martha Alyne Harbison

Marie Angelopoulos

David Lee Rath

Jeffrey Curtis Hedrick

Eric D Perfecto

Mahmoud M Khojasteh

James Patrick Doyle

Jacques Faguet

Jane Elizabeth Frommer

John Patrick Hummel

Nicholas Ian Buchan

Nicholas C Fuller

Daniel George Berger

James P Godschalx

Daniel Joseph Dawson

Robert J Twieg

Kumar R Virwani

Jila Tabib

Eva Erika Simonyi

James L Hedrick, Jr

John R Susko

Elwood Herbert Macy

Q Jason Niu

Anthony F Arnold

Mark Clinton Thurber

Sean Clemenza

Robin A Wheater

Prabodh R Shah

Geraud J M Dubois

Ying Ying Cheng

Geraud Jm Dubois

Sung-Mog Kim

Debra B LaVergne

Richard D Diller, Deceased

Patricia M Cotts

Robin S King

Vaughn R Deline

A porous substrate susceptible to one or both of hydroxylation and alkoxylation by a first protic solvent is exposed to a first relative pressure of the first protic solvent. The porous substrate includes a first plurality of pores having a first average pore diameter and a second plurality of pores having a second average pore diameter that is greater than the first average pore diameter. The first relative pressure is effective to one or both of hydroxylate or alkoxylate substantially only pores of the first average pore diameter to form a first modified porous substrate. The first modified porous substrate is reacted with a first functionalizing reagent that is effective to functionalize one or both of hydroxylated or alkoxylated surfaces, thereby functionalizing substantially only the first plurality of the pores, to form a first functionalized porous substrate.

Selectively functionalized porous material

Provided is a pore-filling method for protecting the pores of a porous material. The method, which is performed using a modified i-CVD technique, involves filling the pores of a porous material with a gas phase monomer within a pressure chamber and subsequently polymerizing the monomer, both within the pores and on the surface of the material as an overburden. The method is solvent-free and can fill and protect pores of any size of any material.

Implementing the post-porosity plasma protection (P4) process using I-CVD

Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

Surface modification by polymer anchoring on porous substrates

The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

Enhanced adhesive materials and processes for 3D applications

The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200&#xb0; C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225&#xb0; C. The invention includes production of a product by this process and an article of manufacture embodying these features.

Enhanced via fill material and processing for dual damscene integration

An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids.

Articles including ultra low dielectric layers

An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment.

Method of manufacturing an ultra low dielectric layer

A method and computer product program for determining Young's modulus. The method includes placing a probe in contact with a surface of a material on a substrate and, with an initial force of 800 nano newtons or less; determining the location of the surface relative to an initial indentation depth for the initial force; increasing the force on the probe from the initial force to a maximum force greater than the initial force to generate a load curve; decreasing the force on the probe from the maximum force to the initial force to generate an unload curve, the maximum force selected such that the unload curve is independent of the presence of the substrate; and using the unload curve, determining a relationship between (i) the reduced modulus of the sample material and (ii) the ratio of probe penetration depth and the thickness of the layer.

Determination of young'S modulus of porous thin films using ultra-low load nano-indentation

A technique includes applying a liquid dielectric composition onto a substrate, where the composition includes metal ions, at least partially curing the composition to form a dielectric layer with the metal ions, patterning the dielectric layer to form electron-rich regions at a surface thereof, heating the patterned dielectric layer to drive the metal ions to the electron-rich regions thereof, thereby forming a metal barrier layer on at least a portion of the surface of the dielectric layer, and depositing one or more metal layers onto the metal barrier layer.

Self-forming metal barriers

A method includes applying a filling material to a surface of a first layer overlying a substrate. The first layer includes a dielectric material with a plurality of pores. The filling material includes a polymer and an ionic compound. The method includes heating the structure to enable the filling material to at least partially fill the plurality of pores throughout the first layer, and removing the residual filling material from the surface of the first layer, while leaving substantially all of the polymer in the pores of the first layer.

Dielectric filling materials with ionic compounds

The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing the compatibility between the ULK surface and the filling material. The invention obtains high filling levels with minimum modification to the ULK material, as only a thin top portion is modified without significant pore sealing.

Surface plasma modification of porous thin-films to optimize pore filling

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San Jose, CA, United States of America

Willi Volksen