Asml Netherlands B.v.

Willem Van Schaik

Norbertus Benedictus Koster

Bastiaan Matthias Mertens

Hans Meiling

Johannes Catharinus Hubertus Mulkens

Heine Melle Mulder

Paul Van Der Veen

Vadim Yevgenyevich Banine

Johannes Hubertus Josephina Moors

Levinus Pieter Bakker

Andrey Sergeevich Tychkov

Antonie Ellert Duisterwinkel

Disclosed is a radiation source module and a radiation collector for the module with the radiation collector comprising a substrate coated with at least one reflective layer and a plurality of perforations within the reflective layer, with the plurality of holes forming vertices of a grid substantially covering the surface, and wherein the coating may comprise multiple layers.

EUV source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus

In a lithographic projection system, the radiation energy delivered to the substrate needs to be accurately controlled. Attenuation by injecting an absorbent gas into a volume through which the radiation passes is a convenient way to control the energy. Additionally, the interaction between gasses and the radiation may be used to measure the energy of the radiation with minimal disruption to the radiation.

Lithographic apparatus, device manufacturing method, and device manufactured thereby

In-situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of molecular oxygen. Generally, the space will be purged with an ozoneless purge gas which contains a small amount of molecular oxygen in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of molecular oxygen into the space.

Lithographic projection apparatus, device manufacturing method and device manufactured thereby

Pre-cleaning or in situ cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating the optical component with microwave and/or infra-red radiation, preferably infra-red radiation having a wavelength or a range of wavelengths in the range of from 1000 cmto 4600 cm. This technique may be suitable for cleaning a mask. By monitoring the absorption of microwave and/or infra-red radiation directed at a contaminated optical component, the degree of contamination of said component can be qualified. This method may also be suitable for reducing the partial pressure of water in EUV apparatus.

Cleaning of optical components for use in a lithographic projection apparatus can be carried out by irradiating a space within the apparatus containing the optical component with UV or EUV radiation having a wavelength of less than 250 nm, in the presence of an oxygen-containing species selected from water, nitrogen oxide and oxygen-containing hydrocarbons. Generally, the space will be purged with an ozone-less purge gas which contains a small amount of the oxygen-containing species in addition to the usual purge gas composition. The technique can also be used in an evacuated space by introducing a low pressure of the oxygen-containing species into the space.

Lithographic projection apparatus, device manufacturing method, device manufactured thereby, cleaning unit and method of cleaning contaminated objects

In a lithographic projection system using exposure radiation of 157 nm, compositions of gas, e.g. levels of oxygen and water vapor, are measured in regions traversed by the projection beam. The attenuation caused by said gases is predicted and the dose of radiation accumulated during an exposure, the uniformity and angular distribution of radiation energy delivered by said projection beam to a substrate during an exposure is controlled accordingly. The control may comprise a controlled supply of O to a volume traversed by the projection beam so as to effect a controlled attenuation of the projection beam. The O distribution may be non-uniform, e.g. to selectively filter spatially separated diffraction orders or to eliminate non-uniformity's in the projection beam.

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's-Hertogenbosch, Netherlands

Willem Van Schaik