Asml Netherlands B.v.

Asml Holding N.v.

Willem Joan Van Der Zande

Pieter-Jan Van Zwol

Mária Péter

David Ferdinand Vles

Willem-Pieter Voorthuijzen

Paul Janssen

Johannes Petrus Martinus Bernardus Vermeulen

Maxim Aleksandrovich Nasalevich

Arnoud Willem Notenboom

Marcus Adrianus Van De Kerkhof

Derk Servatius Gertruda Brouns

Erik Achilles Abegg

Aleksandar Nikolov Zdravkov

Andrey Alexandrovich Nikipelov

Johan Hendrik Klootwijk

James Norman Wiley

Pradeep Kumar Govil

Adrianus Johannes Maria Giesbers

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Aage Bendiksen

Antonius Franciscus Johannes De Groot

Egbert Lenderink

Matthias Kruizinga

Evgenia Kurganova

Hrishikesh Patel

Gijsbert Rispens

Gerrit Van Den Bosch

Nadja Schuh

Nirupam Banerjee

Chaitanya Krishna Ande

Michiel Alexander Blauw

Hendrikus Jan Wondergem

Antonius Willem Verburg

Peter Simon Antonius Knapen

Nicolae Maxim

Claudia Piliego

Johannes Joseph Janssen

Marcel Peter Meijer

Wouter Rogier Meijerink

Raymond Olsman

Maria Peter

Vadim Yevgenyevich Banine

Jozef Petrus Henricus Benschop

Luigi Scaccabarozzi

Florian Didier Albin Dhalluin

Martinus Hendrikus Antonius Leenders

Andrei Mikhailovich Yakunin

Arjen Boogaard

Dennis De Graaf

Tamara Druzhinina

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Ties Wouter Van Der Woord

Alexey Sergeevich Kuznetsov

Jeroen Van Duivenbode

Mohammad Reza Kamali

Michael Alfred Josephus Kuijken

Zomer Silvester Houweling

Eric Willem Felix Casimiri

Sicco Oosterhoff

Fabio Sbrizzai

Dmitry Kurilovich

Johannes Petrus Vermeulen

Alexandar Nikolov Zdravkov

Jozef Petrus Benschop

Florian Didier Dhalluin

Pradeep K Govil

Mária PÉTER

Eric Willem Casimiri

Beatrijs Louise Verbrugge

Michael Alfred Kuijken

Martinus Hendrikus Leenders

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle

A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Pellicle and pellicle assembly

A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.

Membrane cleaning apparatus

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A membrane assembly for EUV lithography, the membrane assembly including: a planar membrane; a border configured to hold the membrane; and a frame assembly connected to the border and configured to attach to a patterning device for EUV lithography, wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.

Membrane assembly

A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.

Method for manufacturing a membrane assembly

A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane has one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10cm, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are within some or all of the additional layers.

Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane

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Bussum, Netherlands

Willem Joan Van Der Zande