Teledyne Dalsa B.v.

Fei Comapny

Dalsa Corporation

Trixell

Willem Hendrik Maes

Daniel Wilhelmus Elisabeth Verbugt

Alouisius Wilhelmus Marinus Korthout

Adrianus Johannes Mierop

Hermanus L Peek

Matthias Sonder

Andrey Lomako

Wilco Klaassens

Chiel Smit

Hendrikus Petrus Maria Sterken

Joris Pieter Valentijn Maas

Bartholomeus Goverdina Maria Henricus Dillen

James Miller

Robertus Johannes Michael Vucht

Willem-Jan Toren

Hein Otto Folkerts

Willem Hoekstra

Daniel Hendrik Jan Maria Hermes

Daniël Verbugt

Hermanus Leonardus Peek

The present invention relates to an X-ray imaging system. The invention further relates to an X-ray sensor to be used in such system and to a method for manufacturing such sensors. According to the invention, the combination of a lower saturation dose and obtaining a plurality of image frames during a single exposure, can be used to form a final X-ray image having an improved dynamic range.

X-ray imaging system, X-ray sensor, and method for manufacturing an X-ray sensor

The present invention is related to a multi full-well pixel for a metal-oxide-semiconductor (MOS) active pixel image sensor. It is further related to a MOS active pixel image sensor comprising a plurality of such pixels. The invention is particularly related to active pixel image sensors realized in complementary MOS (CMOS) technology. According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS capacitor to be selected and being radiation-hard for damaging X-ray radiation.

Radiation-hard MOS pixel sensor

A pixel circuit comprises a first capacitor, a photo diode and a switch. A voltage source generates a reference voltage to reset the pixel circuit. The pixel circuit is reset for a first reset time period by electrically coupling a cathode of the photo diode and a first capacitor terminal to the voltage source. The cathode is decoupled from the voltage source and the photo diode is exposed to light for an accumulation time period. After the accumulation time period, a first reference voltage is sampled. The cathode is then coupled, via the switch, to the first capacitor terminal for a selected transfer time period, during which a second signal voltage is sampled. After the selected transfer time period, a first signal voltage is sampled with the cathode decoupled. The pixel circuit is then reset for a second reset time period, after which a second reference voltage value is sampled.

Circuit controller for controlling a pixel circuit and a method of controlling a pixel circuit

The invention relates to a semiconductor device comprising: i) a substrate () comprising an insulating layer (), wherein the electrically insulating layer () comprises a recess (), and ii) a first conductive wire (). The first conductive wire () comprises a first conductive sub-layer () provided within the recess (), and comprises a second conductive sub-layer () provided on the first conductive sub-layer () forming a shunt for the first conductive sub-layer (), wherein the first conductive sub-layer () comprises tungsten and the second conductive sub-layer () comprises aluminum, wherein the first conductive sub-layer () and the second conductive sub-layer () are substantially planar, and wherein the second conductive sub-layer () has substantially the same pattern as the first conductive sub-layer (). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology. This advantage is particularly useful in high-speed and/or high resolution image sensors.

Semiconductor device and method of manufacturing such semiconductor device

The invention relates to a method of reading out a CMOS image sensor. The method includes setting a pixel (Pxl) in a first mode (SS) and resetting the pixel (Pxl) so the predefined voltage (V-ref) is set over the photo-diode (Dde) and the first capacitance (C_low). The method further includes collecting charge carriers that reduce the pixel potential (Vp) on the photo-diode (Dde). The method further includes reading out the pixel (Pxl) while in the first mode (SS) and a second mode (LS), and storing the pixel potential (Vp). The method further includes resetting the pixel (Pxl) such that the predefined voltage (V_ref) is over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high). The method further includes reading out the pixel (Pxl) while in the second mode (LS) and the first mode (SS), and storing the pixel potential (Vp).

Method of reading out a CMOS image sensor and a CMOS image sensor configured for carrying out such method

Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

Semiconductor device with an image sensor and method for the manufacturing of such a device

A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

Pixel for correlated double sampling with global shutter

The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Semiconductor device with a CMOS image sensor and method of manufacturing such a device

The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides. Preferably the first part elements comprises the read-out circuitry of the columns and the second part elements comprises the control circuitry of the rows, the latter preferably being distributed over a number of centrally positioned columns. A device according to the present invention is very suitable for X-ray medical imaging.

Semiconductor device with a CMOS image sensor, apparatus comprising such a semiconductor device and method of manufacturing such a device

Method for performing focusing in a particle-optical device with the aid of astigmatism in the particle beam. In a particle-optical device such as an electron microscope it is advantageous to perform the process of focusing automatically. In accordance with the invention, the electron beam which is to be focused is deliberately made astigmatic to a certain degree. With this astigmatic beam, two images of a specimen are made at two different settings of the objective, after which in each of the images the direction of the astigmatic smearing is determined&#x2014;for example, with the aid of a two-dimensional Fourier transform (FFT). The directions of the astigmatic smearing are perpendicular to each other if, in the transition from a first setting of the objective to a second one, the point of optimum focus is passed. Through a process of interpolation (which process may be iterative) between these two settings, the point of optimum focus can now be determined. Possible anisotropy in the specimen itself can be eliminated by making two images at both of the settings of the objective and by subtracting the FFTs thereof from each other.

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Lommel, Belgium

Willem Hendrik Maes